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2SD1223(TE16L1,NQ)

Toshiba

2SD1223(TE16L1,NQ) by Toshiba

Toshiba's 2SD1223 NPN BJT features a min hFE of 1000, max VCE of 80V, and max IC of 4A. Ideal for switching applications, this Darlington transistor with built-in diode and resistor comes in a small outline package with gull wing terminals.

Median Price

$0.522

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Newark

USA . 1,334 parts In-Stock

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$1.140

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$0.481

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$0.342

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Element14

Singapore . 499 parts In-Stock

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$1.900

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$0.795

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$0.554

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499

$1.900

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Verical

USA . 1,415 parts In-Stock

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$0.536

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Farnell

UK . 499 parts In-Stock

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$0.508

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$0.285

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DigiKey

USA . 371 parts In-Stock

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Chip1Stop

Japan . 305 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 750 parts In-Stock

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VNN

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Ampacity Inc.

Singapore . 488 parts In-Stock

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$0.421

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Component Stockers USA

USA . 9,772 parts In-Stock

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$0.540

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$0.380

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Microchip USA

USA . 238 parts In-Stock

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$2.350

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Upgrade your electronic projects with the high-quality 2SD1223(TE16L1,NQ) by Toshiba. This Small Signal Bipolar Junction Transistor boasts reliability and performance, thanks to its renowned manufacturer. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 4A. Its compact design and gull wing terminals make it easy to integrate into any project. Experience the value and benefits of using this transistor in your next design - trust Toshiba for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides excellent protection for the transistor, making it durable and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and reliability.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor enhance the performance and versatility of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration into circuit board designs.

Package Shape: RECTANGULAR

The rectangular shape of the package helps in easy placement and mounting on circuit boards.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit design and reduces complexity.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting and helps in maintaining firm connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 1000

With a minimum DC current gain of 1000, this transistor provides high amplification capabilities.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for use in various voltage applications.

Transistor Element Material: SILICON

Silicon is a widely used material in transistors due to its high performance, reliability, and efficiency.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high current levels in different applications.

Terminal Position: SINGLE

Having a single terminal position simplifies the circuit design and makes connections more straightforward.

Case Connection: COLLECTOR

The case connection at the collector ensures efficient heat dissipation and helps in maintaining optimal performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1223(TE16L1,NQ) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SD1223(TE16L1,NQ) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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