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2SC5053T100Q

ROHM

2SC5053T100Q by ROHM

ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.

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Overview

Experience the superior performance of the 2SC5053T100Q by ROHM, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With a maximum VCEsat of 0.4V and a minimum DC Current Gain (hFE) of 120, this NPN transistor offers unmatched efficiency and reliability. The sleek rectangular package body material made of PLASTIC/EPOXY ensures durability while the small outline package style makes it ideal for surface mount applications. Trust ROHM's reputation for quality and innovation and elevate your electronic designs with the 2SC5053T100Q.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN components in circuits, enhancing compatibility and flexibility in design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low VCEsat, making it efficient and suitable for use in high-speed circuits.

Maximum VCEsat: 0.4 V

With a low VCEsat of 0.4V, this transistor minimizes power loss and improves efficiency in switching applications.

Minimum DC Current Gain (hFE): 120

The high minimum DC current gain ensures reliable amplification and signal processing, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperature environments, increasing its reliability in harsh conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V provides a wide voltage margin for safe operation in various applications.

Maximum Collector Current (IC): 1 A

Capable of handling a maximum collector current of 1A, this transistor can be used in circuits that require high current output.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates fast response and high-frequency performance, suitable for applications requiring high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5053T100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC5053T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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