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2SC568

Onsemi

2SC568 by Onsemi

The Onsemi 2SC568 is a NPN BJT with max. collector-emitter voltage of 15V, ideal for low-power applications. Featuring a min. DC current gain of 30 and max. power dissipation of 0.2W, it operates up to 150 °C. Commonly used in small signal amplification due to its high transition frequency of 200MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,383 parts In-Stock

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Digiode

USA . 880 parts In-Stock

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880

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SupplyDigital Components

Austria . 5,343 parts In-Stock

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Problanco Electronics

Mexico . 3,623 parts In-Stock

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Kulean Microsystems

USA . 3,161 parts In-Stock

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Northwest PG Solutions

USA . 1,915 parts In-Stock

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$4.297

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Native Components

USA . 888 parts In-Stock

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$4.253

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UHIMA Technologies

Türkiye . 686 parts In-Stock

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TANS Electronics

Latvia . 669 parts In-Stock

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Corphita

USA . 415 parts In-Stock

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Corohmni

South Africa . 53 parts In-Stock

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Overview

Elevate your electronic designs with the superior performance and reliability of the 2SC568 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality small signal bipolar junction transistors (BJTs) like no other. With its NPN polarity, single configuration, and wire terminals, this product is ideal for a wide range of applications. Experience the value and benefits of using the 2SC568, from its high DC current gain to its maximum power dissipation of 0.2 W. Trust Onsemi to provide you with a top-of-the-line product that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation, ensuring the transistor operates efficiently and reliably.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and signal processing circuits, making this transistor versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making this transistor easy to use.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels effectively.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC568 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC568 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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