Loading...

2SC5658M3T5G

Onsemi

2SC5658M3T5G by Onsemi

2SC5658M3T5G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.26W. Suitable for surface mount designs with matte tin finish and operating temperature up to 150°C.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 48,896 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

1k+ parts

$0.041

10k+ parts

$0.029

48,896

$0.170

$0.065

$0.041

$0.029

Mouser Electronics

USA . 1,560 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

1k+ parts

$0.044

10k+ parts

$0.032

1,560

$0.170

$0.065

$0.044

$0.032

Flip Electronics (Authorized)

USA . 288,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

288,960

-

-

-

-

Arrow

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,000

-

-

-

-

Verical

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,000

-

-

-

-

Chip1Stop

Japan . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.021

32,000

-

-

-

$0.021

Rochester

USA . 11,151 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

11,151

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 611 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

611

$0.010

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.029

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.029

-

-

-

American Microsemiconductor Inc.

USA . 7,480 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

-

7,480

$0.500

-

-

-

Flip Electronics

USA . 184,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

184,960

-

-

-

-

Vyrian

USA . 53,099 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53,099

-

-

-

-

Diverse Electronics

Canada . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,000

-

-

-

-

Chip Stock

USA . 8,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,786

-

-

-

-

Bristol Electronics

USA . 7,505 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

$0.113

10k+ parts

$0.056

7,505

-

$0.188

$0.113

$0.056

Microfarads

USA . 7,092 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,092

-

-

-

-

Cyclops Electronics Ltd

UK . 170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

170

-

-

-

-

Semi Source

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

VNN

France . 75 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

75

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 53,080 parts In-Stock

1+ parts

$0.009

100+ parts

-

1k+ parts

-

10k+ parts

-

53,080

$0.009

-

-

-

Corphita

USA . 801 parts In-Stock

1+ parts

$0.009

100+ parts

-

1k+ parts

-

10k+ parts

-

801

$0.009

-

-

-

Corohmni

South Africa . 419 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

419

$0.010

-

-

-

Perfect Parts

USA . 76,636 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76,636

-

-

-

-

Kepictronics

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72,000

-

-

-

-

ChipstoGo Electronic ltd

UK . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,000

-

-

-

-

Lixinc

USA . 8,723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,723

-

-

-

-

Continental Prestige Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.026

8,000

-

-

-

$0.026

TANS Electronics

Latvia . 5,896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,896

-

-

-

-

Problanco Electronics

Mexico . 4,597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,597

-

-

-

-

SupplyDigital Components

Austria . 4,485 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,485

-

-

-

-

UHIMA Technologies

Türkiye . 578 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

578

-

-

-

-

Kulean Microsystems

USA . 463 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

463

-

-

-

-

Overview

Unlock the potential of your electronic designs with the 2SC5658M3T5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJT). This NPN transistor boasts a sleek rectangular package body, making it perfect for amplifier applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 120, this transistor offers unmatched performance and efficiency. Trust Onsemi to provide you with superior products that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

This NPN configuration allows for easy integration into circuits and systems, offering versatility in design.

Configuration: SINGLE

The single configuration simplifies circuit layouts and reduces complexity in assembly, making it user-friendly.

Transistor Application: AMPLIFIER

Designed for amplifier use, this transistor provides high gain and efficiency for signal processing applications.

Surface Mount: YES

With surface mount compatibility, this transistor can be easily mounted on PCBs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape allows for space-efficient placement on a circuit board, optimizing layout design.

Terminal Form: FLAT

The flat terminal form ensures secure connections and efficient soldering, enhancing overall performance and reliability.

No. of Terminals: 3

With three terminals, this transistor offers a straightforward interface for connecting in circuits, increasing usability.

Maximum Power Dissipation (Abs): 0.26 W

This high power dissipation capability ensures reliable performance under demanding conditions, enhancing overall durability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for dense circuit board layouts, ideal for compact designs.

Minimum DC Current Gain (hFE): 120

The minimum DC current gain of 120 indicates high amplification capabilities, making it suitable for signal amplification tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures stability and performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V allows for operation in various voltage ranges, increasing versatility.

Transistor Element Material: SILICON

The silicon element material offers high performance and reliability, ensuring long-term functionality in critical applications.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A provides sufficient current capacity for a wide range of applications, ensuring reliable operation.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals ensures secure connections and corrosion resistance, enhancing overall durability.

Terminal Position: DUAL

This dual terminal position offers flexibility in circuit design and allows for multiple connection options, improving compatibility.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds reduces the risk of damage during soldering, ensuring reliable performance.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for efficient and reliable soldering, ensuring secure connections and optimal performance.

Nominal Transition Frequency (fT): 180 MHz

The high nominal transition frequency of 180MHz indicates fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5658M3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5658M3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20