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2SC5706-H

Onsemi

2SC5706-H by Onsemi

The Onsemi 2SC5706-H is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications due to its high transition frequency of 400MHz. Comes in a plastic/epoxy package with through-hole terminals for easy installation.

Median Price

$0.636

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100 parts In-Stock

1+ parts

$0.360

100+ parts

$0.338

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$0.306

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100

$0.360

$0.338

$0.306

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Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$0.912

100+ parts

$0.830

1k+ parts

$0.748

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2,500

$0.912

$0.830

$0.748

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Distributors (In-Stock)

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Digiode

USA . 2,128 parts In-Stock

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$0.342

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$0.342

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Vyrian

USA . 1,233 parts In-Stock

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$0.360

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Distributors (Availability)

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Corphita

USA . 211 parts In-Stock

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$0.324

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211

$0.324

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Corohmni

South Africa . 241 parts In-Stock

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$0.360

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241

$0.360

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.912

100+ parts

$0.830

1k+ parts

$0.748

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-

2,500

$0.912

$0.830

$0.748

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Kulean Microsystems

USA . 7,097 parts In-Stock

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7,097

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Problanco Electronics

Mexico . 5,742 parts In-Stock

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SupplyDigital Components

Austria . 5,728 parts In-Stock

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TANS Electronics

Latvia . 5,714 parts In-Stock

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Perfect Parts

USA . 2,508 parts In-Stock

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Northwest PG Solutions

USA . 2,106 parts In-Stock

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Native Components

USA . 338 parts In-Stock

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338

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality 2SC5706-H Small Signal Bipolar Junction Transistor from Onsemi. Known for their reliable and efficient components, Onsemi delivers top-notch performance in every product. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum collector current of 5A. With a minimum DC current gain of 200, this transistor guarantees excellent functionality and durability. Elevate your projects with the trusted brand and superior capabilities of the 2SC5706-H from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance.

Configuration: SINGLE

Simplifies circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures that even small input currents can control large output currents effectively.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation in a wide range of voltage environments, making the transistor versatile.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and temperature stability compared to other materials.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, making it suitable for various applications where high currents are involved.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5706-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5706-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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