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2SC538A

Onsemi

2SC538A by Onsemi

The Onsemi 2SC538A is a NPN BJT transistor with a max power dissipation of 0.3W and hFE of 90, ideal for amplifier applications. It has a max collector-emitter voltage of 45V and operates at up to 175 °C, with a transition frequency of 180MHz in a cylindrical package.

Median Price

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Lifecycle Status

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Digiode

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Halfin

Belgium . 1,760 parts In-Stock

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Vyrian

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MISTER SPROCKETS

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SupplyDigital Components

Austria . 6,297 parts In-Stock

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Problanco Electronics

Mexico . 6,207 parts In-Stock

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TANS Electronics

Latvia . 6,164 parts In-Stock

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Northwest PG Solutions

USA . 820 parts In-Stock

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UHIMA Technologies

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Corphita

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Native Components

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Kulean Microsystems

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Corohmni

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Overview

Unlock the power of innovative technology with the 2SC538A by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. Designed with precision and expertise by Onsemi, this NPN transistor offers unmatched performance and reliability. With a maximum operating temperature of 175 °C and a nominal transition frequency of 180 MHz, this transistor delivers exceptional functionality. Experience the value and benefits of the 2SC538A, providing customers with superior quality and efficiency in a compact cylindrical package. Elevate your projects with Onsemi's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages offer better heat dissipation and mechanical protection, making the transistor more durable and efficient.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Round shape provides better thermal characteristics and makes the transistor easy to mount in circuits.

Terminal Form: WIRE

Wire terminals provide a secure and reliable connection, ensuring stable operation in circuits.

No. of Terminals: 3

3 terminals allow for easy connection in circuits, providing flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.3 W

High power dissipation capability ensures the transistor can handle higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy mounting and integration into various circuit designs.

Minimum DC Current Gain (hFE): 90

High DC current gain ensures efficient amplification of signals in the circuit.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the transistor to operate reliably in various environments.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows the transistor to handle higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making this transistor a good choice for various applications.

Maximum Collector Current (IC): 0.05 A

High collector current rating allows the transistor to handle higher current levels in the circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in circuit designs.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows the transistor to amplify high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC538A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC538A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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