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2SC5706-E

Onsemi

2SC5706-E by Onsemi

2SC5706-E by Onsemi is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications due to its high transition frequency of 400MHz. It comes in a plastic/epoxy package with through-hole terminals.

Median Price

$0.566

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3,500 parts In-Stock

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Flip Electronics (Authorized)

USA . 3,425 parts In-Stock

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Nova Conductors

Japan . 35 parts In-Stock

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$0.612

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Chip Stock

USA . 14,500 parts In-Stock

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Vyrian

USA . 3,051 parts In-Stock

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Flip Electronics

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Digiode

USA . 1,584 parts In-Stock

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Prism Electronics

USA . 200 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 231 parts In-Stock

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$0.566

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Argo Parts USA

USA . 3,038 parts In-Stock

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$0.577

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$0.560

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$0.577

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$0.560

Continental Prestige Electronics

USA . 2,387 parts In-Stock

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$0.577

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Netroflash

USA . 1,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,690 parts In-Stock

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$0.735

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Component Stockers USA

USA . 459 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 11,542 parts In-Stock

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Problanco Electronics

Mexico . 8,185 parts In-Stock

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TANS Electronics

Latvia . 8,029 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Corphita

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SupplyDigital Components

Austria . 702 parts In-Stock

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Kepictronics

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GreenTree Electronics

Israel . 169 parts In-Stock

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality 2SC5706-E by Onsemi! This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a maximum collector current of 5A. Manufactured by Onsemi, a trusted name in the industry, this transistor guarantees reliability and performance. Whether you're a hobbyist or a professional, this transistor is sure to provide value and efficiency to your designs. Take your projects to the next level with the 2SC5706-E!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used and well-understood in electronic circuits, making this product versatile and easy to incorporate.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to work with for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control current flow, making it ideal for use in electronic switches.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage, this transistor can handle a wide range of voltage levels, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 400 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5706-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5706-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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