Loading...

2SC539

Onsemi

2SC539 by Onsemi

The Onsemi 2SC539 is a NPN BJT transistor with a max power dissipation of 0.3W and min DC current gain of 90, ideal for amplifier applications. It has a max collector-emitter voltage of 25V and operates at temperatures up to 175 °C, featuring a nominal transition frequency of 180MHz in a cylindrical package with wire terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

635

-

-

-

-

Digiode

USA . 144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

144

-

-

-

-

Huijzer Components

Netherlands . 80 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

80

-

-

-

-

LittleDiode

UK . 14 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 208 parts In-Stock

1+ parts

$123.913

100+ parts

-

1k+ parts

-

10k+ parts

$118.956

208

$123.913

-

-

$118.956

Northwest PG Solutions

USA . 600 parts In-Stock

1+ parts

$136.304

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$136.304

-

-

-

Kulean Microsystems

USA . 7,658 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,658

-

-

-

-

TANS Electronics

Latvia . 3,595 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,595

-

-

-

-

Problanco Electronics

Mexico . 2,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,124

-

-

-

-

Corphita

USA . 1,309 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,309

-

-

-

-

UHIMA Technologies

Türkiye . 983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

983

-

-

-

-

SupplyDigital Components

Austria . 376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

376

-

-

-

-

Corohmni

South Africa . 104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

104

-

-

-

-

Assy Fe

Spain . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26

-

-

-

-

Overview

Unleash the power of innovation with the 2SC539 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for amplification applications. With a single NPN configuration and a maximum operating temperature of 175 °C, this transistor offers unparalleled reliability and performance. Ideal for amplifiers, the 2SC539 delivers a minimum DC current gain of 90 and a nominal transition frequency of 180 MHz. Trust in Onsemi's expertise and invest in a product that will exceed your expectations. Elevate your projects with the 2SC539 and experience unmatched value and benefits today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides better heat dissipation and mechanical protection, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to integrate into electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round package shape allows for compact and efficient placement on circuit boards, saving space in electronic designs.

Terminal Form: WIRE

Wire terminals are easy to solder and provide a secure connection, facilitating installation and use in electronic circuits.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function effectively in electronic circuits.

Maximum Power Dissipation (Abs): 0.3 W

A higher maximum power dissipation rating ensures the transistor can handle more power without overheating, improving its overall performance and reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a standardized form factor for easy integration into various electronic projects and equipment.

Minimum DC Current Gain (hFE): 90

Higher minimum DC current gain ensures stable amplification performance, making the transistor suitable for a wide range of applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, increasing its reliability in different environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltages, making it suitable for various amplifier and switching applications.

Transistor Element Material: SILICON

Silicon as the transistor element material offers good performance characteristics, such as high conductivity and reliability, ensuring optimal transistor operation.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating determines the maximum current the transistor can handle, making it suitable for low to moderate power applications.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and facilitates easier soldering and connection to other components in the circuit.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency allows the transistor to operate efficiently at high frequencies, making it ideal for high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC539 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC539 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20