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2SC5706-TL-H

Onsemi

2SC5706-TL-H by Onsemi

2SC5706-TL-H by Onsemi is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications, it has a fT of 400MHz and comes in a small outline package with Gull Wing terminals.

Median Price

$0.931

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 634 parts In-Stock

1+ parts

$1.970

100+ parts

$0.846

1k+ parts

$0.643

10k+ parts

$0.513

634

$1.970

$0.846

$0.643

$0.513

Mouser Electronics

USA . 1,122 parts In-Stock

1+ parts

$2.080

100+ parts

$0.897

1k+ parts

$0.643

10k+ parts

$0.587

1,122

$2.080

$0.897

$0.643

$0.587

Flip Electronics (Authorized)

USA . 1,400 parts In-Stock

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1,400

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EBV Elektronik

Germany . 700 parts In-Stock

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700

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Rochester

USA . 700 parts In-Stock

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-

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$0.697

1k+ parts

$0.578

10k+ parts

$0.515

700

-

$0.697

$0.578

$0.515

Verical

USA . 700 parts In-Stock

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$0.712

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700

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$0.712

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Farnell

UK . 88 parts In-Stock

1+ parts

-

100+ parts

$0.651

1k+ parts

$0.493

10k+ parts

$0.442

88

-

$0.651

$0.493

$0.442

Element14

Singapore . 88 parts In-Stock

1+ parts

-

100+ parts

$1.150

1k+ parts

$0.771

10k+ parts

$0.756

88

-

$1.150

$0.771

$0.756

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,025 parts In-Stock

1+ parts

$0.492

100+ parts

-

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1,025

$0.492

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.776

100+ parts

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50

$0.776

-

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Flip Electronics

USA . 16,800 parts In-Stock

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16,800

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Vyrian

USA . 890 parts In-Stock

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890

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NAC Semi

USA . 700 parts In-Stock

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$2.900

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700

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$2.900

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Prism Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Corphita

USA . 1,803 parts In-Stock

1+ parts

$0.466

100+ parts

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1,803

$0.466

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Corohmni

South Africa . 143 parts In-Stock

1+ parts

$0.518

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143

$0.518

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.776

100+ parts

$0.760

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1,000

$0.776

$0.760

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Argo Parts USA

USA . 804 parts In-Stock

1+ parts

$0.776

100+ parts

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804

$0.776

-

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Continental Prestige Electronics

USA . 2,969 parts In-Stock

1+ parts

$1.190

100+ parts

$0.728

1k+ parts

$0.426

10k+ parts

-

2,969

$1.190

$0.728

$0.426

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Microchip USA

USA . 365 parts In-Stock

1+ parts

$4.340

100+ parts

$4.320

1k+ parts

$4.300

10k+ parts

$4.290

365

$4.340

$4.320

$4.300

$4.290

QUARKTWIN TECHNOLOGY LTD

USA . 13,664 parts In-Stock

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13,664

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SupplyDigital Components

Austria . 7,310 parts In-Stock

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TANS Electronics

Latvia . 5,865 parts In-Stock

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Metaverse IC Inc.

Canada . 5,100 parts In-Stock

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5,100

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Allen Electronics Distributors

USA . 5,075 parts In-Stock

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$0.932

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5,075

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$0.932

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Perfect Parts

USA . 4,968 parts In-Stock

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4,968

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Problanco Electronics

Mexico . 4,302 parts In-Stock

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Kepictronics

USA . 3,950 parts In-Stock

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Kulean Microsystems

USA . 3,135 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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S.R.D Solutions

India . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 845 parts In-Stock

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845

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Overview

Experience the superior quality and reliability of Onsemi's 2SC5706-TL-H Small Signal Bipolar Junction Transistor. This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a collector current of 5A. With a minimum DC current gain of 200 and a nominal transition frequency of 400MHz, this transistor ensures optimal performance in a compact package. Trust in Onsemi's expertise in semiconductor manufacturing and elevate your electronic designs with the efficiency and precision of the 2SC5706-TL-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable design, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplifying and switching signals, offering efficient functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and enhanced efficiency.

Surface Mount: YES

The surface mount option makes installation easy and saves valuable space on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs and facilitates streamlined assembly processes.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and reliable connection for stable operation.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to integrate into circuits, making it user-friendly.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-saving and ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent and predictable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage allows for handling of higher voltage signals with ease.

Transistor Element Material: SILICON

Silicon is a reliable and commonly used material for transistors, ensuring stable performance.

Maximum Collector Current (IC): 5 A

With a high maximum collector current, this transistor is suitable for handling heavy loads.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish offers excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper orientation in the circuit.

Case Connection: COLLECTOR

The collector case connection enhances thermal dissipation and helps maintain optimal operating conditions.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, making it suitable for soldering processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliable connection on PCBs.

Nominal Transition Frequency (fT): 400 MHz

The high nominal transition frequency allows for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5706-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5706-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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