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2SC5706

Onsemi

2SC5706 by Onsemi

The Onsemi 2SC5706 is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 5A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and high fT of 400MHz make it suitable for various electronic designs.

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Vyrian

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Prism Electronics

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Fibra_Brandt Electronic GMBH

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LittleDiode

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Kepictronics

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Problanco Electronics

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Northwest PG Solutions

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Overview

Discover the high-quality performance of the 2SC5706 by Onsemi, a top-notch Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, known for their reliability and innovation, this NPN transistor offers customers value and benefits with its impressive features. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, this transistor ensures efficient operation at a maximum temperature of 150 °C. Upgrade your electronic projects with the 2SC5706 and experience superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and protects the transistor from external elements, making it ideal for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing versatile functionality.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and integration, making the transistor easy to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in control circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in various applications.

Minimum DC Current Gain (hFE): 200

Provides high current gain, enabling efficient amplification and signal processing in circuits.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low power applications, offering reliable voltage handling capabilities.

Maximum Collector Current (IC): 5 A

With a high maximum collector current, this transistor can handle moderate to high power loads in circuits.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency allows for high-speed switching operations, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC5706 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5706 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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