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2SA1797T100/Q

ROHM

2SA1797T100/Q by ROHM

ROHM 2SA1797T100/Q is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 3A. It has a min. DC current gain of 120, ideal for amplifier applications due to its high transition frequency of 200MHz and small outline package style.

Median Price

$0.283

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Verical

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Vyrian

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Overview

Upgrade your amplifier with the high-quality 2SA1797T100/Q by ROHM! This Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance and reliability, thanks to its superior design and construction by ROHM. Ideal for various applications, this PNP transistor guarantees efficient amplification, making it a must-have for any electronics enthusiast or professional. Experience the benefits of enhanced sound quality and increased power output with the 2SA1797T100/Q - a valuable addition to your electronic projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate into electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto circuit boards.

Maximum Power Dissipation (Abs): 2 W

The high maximum power dissipation rating of 2 W ensures the transistor can handle power-intensive applications without overheating.

Minimum DC Current Gain (hFE): 120

A minimum DC current gain of 120 ensures efficient amplification of input signals with minimal distortion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperatures and operate reliably under various conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50 V allows the transistor to handle higher voltage applications without breakdown.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A enables the transistor to handle high current loads for effective signal amplification.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200 MHz indicates the transistor's ability to amplify signals at high frequencies, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1797T100/Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1797T100/Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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