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2SA1015O

Continental Device India

2SA1015O by Continental Device India

2SA1015O by Continental Device India is a PNP BJT with VCEsat of 0.3V, hFE of 25, and IC of 0.15A. Ideal for low-power applications in electronics due to its small package size and high transition frequency of 80MHz. Suitable for amplification circuits in consumer electronics and industrial control systems.

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Overview

Discover the superior performance and reliability of the 2SA1015O by Continental Device India, a top-quality Small Signal Bipolar Junction Transistor. Ideal for various applications, this PNP transistor boasts a low VCEsat of 0.3V and a high DC current gain of 25, ensuring efficient operation. With a maximum operating temperature of 125°C and a compact cylindrical package design, this transistor offers exceptional value and benefits to our customers. Upgrade your electronics with the 2SA1015O and experience cutting-edge technology at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides high durability and strong insulation, ensuring the transistor's reliability in various application environments.

Polarity or Channel Type: NPN

NPN polarity type allows for easy integration into circuits and ensures compatibility with other NPN components.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it ideal for basic amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in signal amplification tasks.

Surface Mount: YES

Surface mount capability enables easy and convenient PCB assembly, saving space and facilitating mass production.

Maximum VCEsat: 0.5 V

Low VCEsat value results in minimal power loss and high efficiency operation, ideal for energy-efficient amplifier designs.

Package Shape: RECTANGULAR

Rectangular package shape provides easy handling and efficient placement on PCBs, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminal form ensures secure soldering connections, enhancing reliability and durability of the transistor.

No. of Terminals: 3

Simple three-terminal design simplifies integration and connection in circuits, reducing the risk of errors during assembly.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation allows for operation without the need for extensive cooling solutions, making it suitable for compact designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and facilitates compact circuit designs, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures stable and consistent amplification, improving overall performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for reliable performance in diverse environmental conditions, ensuring operational stability.

Maximum Collector-Emitter Voltage: 120 V

High collector-emitter voltage rating offers versatility in amplifier applications, allowing for operation in a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon construction provides high reliability and efficiency, ensuring long-term performance and stability in amplifier circuits.

Maximum Collector Current (IC): 0.05 A

Sufficient collector current rating allows for handling moderate current levels, making it suitable for various amplifier applications.

Terminal Position: DUAL

Dual terminal position enables easy and secure connections, enhancing the overall reliability and stability of the transistor in circuit integration.

Nominal Transition Frequency (fT): 140 MHz

High nominal transition frequency ensures rapid signal processing and amplification, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1015O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1015O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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