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2SA1417S-TD-E

Onsemi

2SA1417S-TD-E by Onsemi

The Onsemi 2SA1417S-TD-E is a PNP BJT transistor with a max. collector-emitter voltage of 100V and max. collector current of 2A. It has a min DC current gain of 140, making it suitable for switching applications in small outline packages. With a nominal transition frequency of 120MHz, it offers high performance in compact designs.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,762 parts In-Stock

1+ parts

$1.080

100+ parts

$0.442

1k+ parts

$0.290

10k+ parts

-

11,762

$1.080

$0.442

$0.290

-

DigiKey

USA . 800 parts In-Stock

1+ parts

$1.080

100+ parts

$0.441

1k+ parts

$0.340

10k+ parts

-

800

$1.080

$0.441

$0.340

-

Chip1Stop

Japan . 260 parts In-Stock

1+ parts

$2.260

100+ parts

$0.633

1k+ parts

-

10k+ parts

-

260

$2.260

$0.633

-

-

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Rochester

USA . 250 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.233

10k+ parts

$0.208

250

-

$0.281

$0.233

$0.208

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,674 parts In-Stock

1+ parts

$0.218

100+ parts

-

1k+ parts

-

10k+ parts

-

1,674

$0.218

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.260

-

-

-

TME

Poland . 856 parts In-Stock

1+ parts

$0.830

100+ parts

$0.363

1k+ parts

$0.273

10k+ parts

$0.264

856

$0.830

$0.363

$0.273

$0.264

Chip Stock

USA . 33,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,500

-

-

-

-

Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Vyrian

USA . 2,723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,723

-

-

-

-

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.420

2,000

-

-

-

$0.420

IBS Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.428

10k+ parts

$0.288

1,000

-

-

$0.428

$0.288

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 894 parts In-Stock

1+ parts

$0.206

100+ parts

-

1k+ parts

-

10k+ parts

-

894

$0.206

-

-

-

Corohmni

South Africa . 469 parts In-Stock

1+ parts

$0.229

100+ parts

-

1k+ parts

-

10k+ parts

-

469

$0.229

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$0.260

-

-

-

Perfect Parts

USA . 29,926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,926

-

-

-

-

Problanco Electronics

Mexico . 6,092 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,092

-

-

-

-

TANS Electronics

Latvia . 6,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,005

-

-

-

-

Kulean Microsystems

USA . 4,581 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,581

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Glotronic Ltd.

UK . 2,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,780

-

-

-

-

UHIMA Technologies

Türkiye . 468 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

468

-

-

-

-

SupplyDigital Components

Austria . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Overview

Upgrade your electronic devices with the high-quality 2SA1417S-TD-E Small Signal Bipolar Junction Transistor by Onsemi. Designed for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 100V and a maximum collector current of 2A, ensuring reliable performance. With a minimum DC current gain of 140 and a nominal transition frequency of 120MHz, this transistor delivers superior functionality in a compact rectangular package. Trust Onsemi's expertise in semiconductor manufacturing to bring you cutting-edge technology that enhances the efficiency and performance of your circuits. Experience the value and benefits of the 2SA1417S-TD-E in your next project today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching circuits, making this transistor suitable for switching applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Package Shape: RECTANGULAR

Allows for easy mounting and placement on the PCB, optimizing use of space.

No. of Terminals: 3

Simple and straightforward connections, reducing chances of error during installation.

Minimum DC Current Gain (hFE): 140

Ensures consistent and stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 100 V

Provides a high voltage tolerance, making it suitable for applications where higher voltages are involved.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability, making this product dependable for various applications.

Maximum Collector Current (IC): 2 A

Capable of handling high current levels, suitable for applications that require higher power handling capabilities.

Terminal Position: SINGLE

Simplifies circuit design and layout, making it easier to incorporate into electronic systems.

Case Connection: COLLECTOR

Convenient connection arrangement for the collector terminal, ensuring efficient circuit design and layout.

Nominal Transition Frequency (fT): 120 MHz

Offers high-speed performance, ideal for applications requiring fast switching speeds or high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1417S-TD-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1417S-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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