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2SA1463IK-T1-AZ

Renesas Electronics

2SA1463IK-T1-AZ by Renesas Electronics

2SA1463IK-T1-AZ by Renesas Electronics is a PNP BJT transistor with max. power dissipation of 2W, hFE of min. 100, and max. collector-emitter voltage of 45V. Ideal for switching applications due to its fast turn on/off times (ton: 40ns, toff: 100ns) and high transition frequency (fT: 400MHz).

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 675 parts In-Stock

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Bastille Electronics

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Overview

Elevate your electronic projects with the 2SA1463IK-T1-AZ by Renesas Electronics, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Renowned for their cutting-edge technology and innovation, Renesas Electronics has crafted a product that is perfect for a variety of applications, from switching to amplification. With its PNP configuration and maximum collector-emitter voltage of 45V, this transistor delivers optimal power dissipation and efficiency. Trust in Renesas Electronics to provide you with the tools you need to bring your projects to life with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching applications, making this transistor suitable for a wide range of switching applications.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into circuits without the complexity of multiple configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact mounting on PCBs, saving space and simplifying assembly.

No. of Terminals: 3

Three terminals provide the necessary connections for proper functioning in a circuit, ensuring ease of use.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact designs and applications.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures amplification of signals with minimal input, enhancing the efficiency of the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in elevated temperature environments, increasing the versatility of the transistor.

Maximum Collector-Emitter Voltage: 45 V

Maximum collector-emitter voltage of 45V allows for handling of higher voltages in the circuit, ensuring versatility and compatibility.

Transistor Element Material: SILICON

Silicon material in the transistor element provides high performance and reliability, making it suitable for various demanding applications.

Maximum Turn On Time (ton): 40 ns

Fast turn on time of 40ns enables quick response in switching operations, ensuring efficient performance in time-sensitive applications.

Maximum Collector Current (IC): 1 A

Maximum collector current of 1A allows for handling higher currents in the circuit, making it suitable for applications requiring high current capability.

Maximum Turn Off Time (toff): 100 ns

Fast turn off time of 100ns ensures quick switching off of the transistor, enhancing efficiency and reducing power losses.

Terminal Position: SINGLE

Single terminal position simplifies connection in the circuit, ensuring ease of use and integration into circuits.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation, ensuring reliable performance even under high power conditions.

Nominal Transition Frequency (fT): 400 MHz

High nominal transition frequency of 400MHz allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1463IK-T1-AZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

40 ns

Trade Compliance

2SA1463IK-T1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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