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2SA1015-Y(F)

Toshiba

2SA1015-Y(F) by Toshiba

The Toshiba 2SA1015-Y(F) is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 120, and fT of 80MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

$0.540

Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip1Stop

Japan . 13,857 parts In-Stock

1+ parts

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100+ parts

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$0.540

10k+ parts

$0.515

13,857

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$0.540

$0.515

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Nova Conductors

Japan . 10 parts In-Stock

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$2.780

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10

$2.780

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Vyrian

USA . 13,439 parts In-Stock

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13,439

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VNN

France . 4,810 parts In-Stock

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4,810

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Ampacity Inc.

Singapore . 13,487 parts In-Stock

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$0.459

100+ parts

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13,487

$0.459

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.780

100+ parts

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1k+ parts

$2.641

10k+ parts

$2.585

1,000

$2.780

-

$2.641

$2.585

Andel Nordic

Denmark . 523 parts In-Stock

1+ parts

$5.841

100+ parts

-

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$5.608

10k+ parts

$5.608

523

$5.841

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$5.608

$5.608

Overview

Discover the power of the Toshiba 2SA1015-Y(F) Small Signal Bipolar Junction Transistor (BJT) - a high-quality component designed for amplifier applications. With a maximum collector current of 0.15 A and a nominal transition frequency of 80 MHz, this PNP transistor offers reliability and performance you can count on. Manufactured by industry leader Toshiba, this single-configured transistor is housed in a durable plastic/epoxy package, making it ideal for a wide range of electronic projects. Upgrade your circuits with the 2SA1015-Y(F) and experience enhanced functionality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and less prone to damage during installation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, and ensures compatibility with single-output applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: ROUND

The round shape allows for easy placement and mounting in circular layouts, maximizing space efficiency in the design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring a reliable and stable connection in the circuit.

No. of Terminals: 3

The three terminals allow for a straightforward and efficient connection in the circuit, simplifying the overall design process.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle higher power levels, making it suitable for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, ideal for applications with limited space.

Minimum DC Current Gain (hFE): 120

A minimum DC current gain of 120 ensures high efficiency and performance in amplification circuits, providing a stable and reliable output.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperatures, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50V allows for high voltage applications, providing flexibility in circuit design and operation.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring high performance and durability in various operating conditions.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15A, this transistor can handle moderate current levels, making it suitable for different types of circuits.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and ensures a secure connection, enhancing the reliability of the transistor in the circuit.

Nominal Transition Frequency (fT): 80 MHz

With a nominal transition frequency of 80MHz, this transistor can operate efficiently at high frequencies, making it suitable for communication and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1015-Y(F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1015-Y(F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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