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2SA1463IK

Renesas Electronics

2SA1463IK by Renesas Electronics

2SA1463IK by Renesas Electronics is a PNP BJT transistor with max. power dissipation of 2W, hFE of 100, and max. collector-emitter voltage of 45V. Ideal for switching applications, it has a small outline package style and can operate at up to 150°C. With a transition frequency of 400MHz, it offers fast turn-on/off times for efficient performance.

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Vyrian

USA . 4,390 parts In-Stock

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4,390

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Nova Conductors

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650

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AZTECH Wire

Italy . 853 parts In-Stock

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853

$14.003

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Experience the superior performance and reliability of the Renesas Electronics 2SA1463IK Small Signal Bipolar Junction Transistor. Designed with precision and quality in mind, this PNP transistor is ideal for switching applications in various electronic devices. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 45V, this transistor offers exceptional value and efficiency. Trust Renesas Electronics to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 2SA1463IK and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation properties and durability, making the transistor suitable for a wide range of operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits and complement NPN transistors in various circuit designs, providing flexibility in applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching times and low power dissipation, ideal for efficient circuit operation.

Surface Mount: YES

Surface mount capability allows for compact and space-saving circuit designs, enabling easy integration onto PCBs in modern electronic devices.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy mounting and handling, ensuring compatibility with existing electronic components and layouts.

Terminal Form: FLAT

Flat terminals offer secure connection points and ease of soldering during assembly, ensuring reliable electrical contact in circuit applications.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capacity allows the transistor to handle moderate power levels without overheating, ensuring stable and reliable performance in demanding environments.

Package Style (Meter): SMALL OUTLINE

Small outline package style enables space-efficient circuit board layouts, suitable for compact electronic devices and applications with limited board real estate.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures consistent and amplified transistor performance, delivering predictable and stable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated environmental conditions, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides a wide voltage handling capability, allowing for versatile voltage switching applications in diverse circuit designs.

Transistor Element Material: SILICON

Silicon-based construction offers high reliability and performance stability, making the transistor durable and suitable for long-term operation in various electronic systems.

Maximum Turn On Time (ton): 40 ns

Fast turn-on time ensures quick response in switching applications, reducing switching losses and improving overall circuit efficiency.

Maximum Collector Current (IC): 1 A

High collector current rating allows the transistor to handle significant current loads, enabling it to drive multiple components or loads in a circuit without performance degradation.

Maximum Turn Off Time (toff): 100 ns

Fast turn-off time helps minimize switching losses and ensures efficient operation in high-frequency switching circuits, improving overall system performance.

Terminal Position: SINGLE

Single terminal position simplifies wiring and connection arrangements, facilitating ease of integration and reducing chances of wiring errors in circuit designs.

Case Connection: COLLECTOR

Collector case connection provides a secure and stable mounting option, enhancing thermal dissipation and reducing the risk of overheating during operation.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency enables fast signal response and amplification, making it suitable for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1463IK attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

40 ns

Trade Compliance

2SA1463IK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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