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2SA1015

National Semiconductor

2SA1015 by National Semiconductor

2SA1015 by National Semiconductor is a PNP BJT with max VCEsat of 0.3V, hFE of 25, and IC of 0.15A. Ideal for low-power applications like audio amplifiers due to its high transition frequency of 80MHz. Package style is cylindrical with through-hole terminals.

Median Price

$0.045

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the 2SA1015 by National Semiconductor. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 25, this PNP transistor is perfect for a wide range of applications. Whether you're working on audio amplifiers, voltage regulators, or oscillators, the 2SA1015 delivers exceptional performance and efficiency. Trust National Semiconductor's reputation for excellence and innovation, and experience the value and benefits that this transistor brings to your projects. Elevate your designs with the 2SA1015 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: PNP

Allows for easy integration with PNP circuit designs, offering flexibility in application.

Maximum VCEsat: 0.3 V

Low VCEsat results in reduced power loss and improved efficiency in circuit operation.

Package Shape: ROUND

Round package shape facilitates easier mounting and handling of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring stability in circuit assembly.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation rating, the transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers space-saving benefits and ease of integration in compact designs.

Minimum DC Current Gain (hFE): 25

Higher hFE value indicates good current amplification capability, making the transistor suitable for signal amplification applications.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in demanding thermal conditions.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance minimizes signal distortion, ensuring high-frequency performance in RF applications.

Maximum Collector-Emitter Voltage: 50 V

With a high breakdown voltage, the transistor can handle higher voltage levels without breakdown, enhancing overall reliability.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high frequency performance, making the transistor suitable for various applications.

Maximum Collector Current (IC): 0.15 A

Moderate collector current rating allows for handling of medium current levels in amplification circuits.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides solderability and ensures good electrical contact, facilitating easy circuit assembly.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and soldering process, aiding in efficient circuit design.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency indicates good high-frequency performance, making the transistor suitable for RF and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1015 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-445-9150, 5961144459150

NIIN

144459150

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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