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2SA1015Y

Continental Device India

2SA1015Y by Continental Device India

2SA1015Y by Continental Device India is a PNP BJT with VCEsat of 0.3V, hFE of 25, and IC of 0.15A. Ideal for low-power applications in electronics due to its small package size and high transition frequency of 80MHz. Suitable for amplification and switching circuits in consumer electronics and industrial control systems.

Median Price

$1.507

Lifecycle Status

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Ace Electronics

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IBS Electronics

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Overview

Discover the superior performance and reliability of the 2SA1015Y by Continental Device India, a top-of-the-line Small Signal Bipolar Junction Transistor. This PNP transistor boasts a maximum VCEsat of 0.3V and a minimum DC current gain of 25, making it ideal for a wide range of applications. With a maximum operating temperature of 125°C and a maximum collector-emitter voltage of 50V, this transistor offers unmatched quality and efficiency. Trust in Continental Device India's expertise and innovation to deliver cutting-edge technology that exceeds expectations. Upgrade your electronic projects with the 2SA1015Y and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, enabling efficient operation and reducing power dissipation.

Package Shape: ROUND

Round package shape allows for easy installation and soldering in circuits, enhancing usability and convenience.

Maximum Power Dissipation (Abs): 0.4 W

With a high maximum power dissipation rating, this transistor can handle relatively high power levels without overheating or failing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum VCE rating provides flexibility in voltage requirements for different circuit designs, ensuring reliable operation.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making this transistor suitable for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1015Y attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SA1015Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-216-7264, 5961012167264, 5961-99-761-8477, 5961997618477

NIIN

012167264, 997618477

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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