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2SD2144STPW

ROHM

2SD2144STPW by ROHM

ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.

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Overview

Enhance your electronic projects with the high-quality 2SD2144STPW by ROHM. Known for their superior manufacturing standards, ROHM delivers a reliable Small Signal Bipolar Junction Transistor (BJT) that promises exceptional performance and durability. Whether you're designing audio amplifiers, voltage regulators, or signal processing circuits, this NPN transistor offers versatility and efficiency. With a maximum collector-emitter voltage of 20V and a nominal transition frequency of 350 MHz, the 2SD2144STPW provides the value and benefits you need to elevate your designs to the next level. Trust in ROHM for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for signal processing.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic systems.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and soldering onto PCBs, saving time and effort during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, ensuring stable performance.

Maximum Power Dissipation (Abs): 0.3 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 1200

A high DC current gain allows for efficient signal amplification and low power consumption in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, providing reliability in various applications.

Maximum Collector-Emitter Voltage: 20 V

With a high voltage rating, this transistor can handle a wide range of voltages, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making this product a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for many signal processing applications.

Terminal Position: SINGLE

Simplifies PCB layout and reduces assembly complexity.

Nominal Transition Frequency (fT): 350 MHz

With a high transition frequency, this transistor is ideal for high-frequency signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2144STPW attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

1200

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2144STPW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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