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2SD2318TLU

ROHM

2SD2318TLU by ROHM

ROHM 2SD2318TLU is a NPN BJT with max. power dissipation of 15W, hFE of 560, and max. collector-emitter voltage of 60V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. collector current of 3A.

Median Price

$1.720

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$0.729

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DigiKey

USA . 1,776 parts In-Stock

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$0.730

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Advanced Electronics

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Ampacity Inc.

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Overview

Upgrade your electronic devices with the reliable 2SD2318TLU Small Signal Bipolar Junction Transistor by ROHM. With a focus on quality and performance, ROHM delivers a NPN transistor that offers superior efficiency and durability. Ideal for a wide range of applications, this transistor is perfect for amplifiers, switching circuits, and voltage regulators. Trust in ROHM to provide exceptional value and benefits, ensuring that your projects run smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for various signal amplification applications.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capacity of 15W, this transistor can handle higher power loads without overheating or failing.

Minimum DC Current Gain (hFE): 560

A high DC current gain of 560 indicates that this transistor can amplify small input signals efficiently, making it ideal for signal amplification tasks.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V makes this transistor suitable for applications requiring higher voltage levels.

Maximum Collector Current (IC): 3 A

A collector current rating of 3A allows this transistor to handle high current loads, making it suitable for various switching and amplification applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering during assembly, enhancing the overall stability of the product.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50MHz, this transistor can switch signals at high speeds, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2318TLU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

560

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2318TLU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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