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2SD2675TL

ROHM

2SD2675TL by ROHM

ROHM 2SD2675TL is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 1A. It has a min. DC current gain of 270, ideal for amplifier applications due to its high transition frequency of 320MHz in a small outline package style.

Median Price

$0.228

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$0.790

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Chip1Stop

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Verical

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Overview

Elevate your electronic projects with the 2SD2675TL by ROHM, a high-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by a trusted name in the industry, this NPN transistor is perfect for amplifier applications and is designed for surface mount installation. With a minimum DC current gain of 270 and a maximum power dissipation of 0.5W, this transistor delivers superior functionality while maintaining a compact size. Invest in the 2SD2675TL and experience the value, precision, and advantages that only ROHM can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, making this transistor versatile for different electronic projects.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in the overall setup.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and facilitates efficient design integration.

Terminal Form: GULL WING

Gull wing terminals offer secure solder connections and ensure reliability in electrical connections.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle high power levels without overheating, ensuring stable operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact circuit designs, ideal for applications where board real estate is limited.

Minimum DC Current Gain (hFE): 270

High DC current gain of 270 ensures efficient signal amplification and reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

Operates reliably at temperatures up to 150°C, making it suitable for a wide range of industrial and commercial applications.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle moderate voltage levels, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and durability, ensuring long-term reliability in electronic devices.

Maximum Collector Current (IC): 1 A

High maximum collector current rating of 1A allows the transistor to handle high current loads, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish enhances solderability and conductivity, ensuring secure electrical connections and long-term reliability.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit board layout and allows for different mounting orientations, enhancing design options.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for up to 10 seconds, ensuring reliable solder connections during the assembly process.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C enables efficient and reliable soldering during manufacturing processes.

Nominal Transition Frequency (fT): 320 MHz

High nominal transition frequency of 320MHz ensures fast switching speeds and high-frequency performance in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2675TL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2675TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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