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2SD2661T100

ROHM

2SD2661T100 by ROHM

ROHM 2SD2661T100 is a NPN BJT transistor with max. collector-emitter voltage of 12V and max. collector current of 2A. It has a min. DC current gain of 270, suitable for amplifier applications due to its high transition frequency of 360MHz and small outline package style.

Median Price

$0.456

Lifecycle Status

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9

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1k+

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Newark

USA . 1,011 parts In-Stock

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$0.968

100+ parts

$0.394

1k+ parts

$0.273

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1,011

$0.968

$0.394

$0.273

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Element14

Singapore . 1,171 parts In-Stock

1+ parts

$1.370

100+ parts

$0.555

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$0.351

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1,171

$1.370

$0.555

$0.351

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Farnell

UK . 1,171 parts In-Stock

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$0.325

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$0.225

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$0.176

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$0.325

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$0.176

Verical

USA . 1,000 parts In-Stock

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$0.456

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DigiKey

USA . 275 parts In-Stock

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$0.282

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$0.212

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Chip1Stop

Japan . 10 parts In-Stock

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VNN

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Nova Conductors

Japan . 200 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 521 parts In-Stock

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$0.319

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521

$0.319

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CoreStaff

Japan . 1,000 parts In-Stock

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$0.390

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$0.204

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$0.150

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$0.390

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Continental Prestige Electronics

USA . 108 parts In-Stock

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$0.442

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$0.271

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$0.170

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$0.160

108

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$0.271

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$0.160

Aranea Global

USA . 1,000 parts In-Stock

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Robosynatics

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Lucentia Tech

USA . 20 parts In-Stock

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$1.363

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$1.262

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$1.262

20

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$1.363

$1.262

$1.262

Overview

Upgrade your electronics with the 2SD2661T100 by ROHM, a high-quality NPN bipolar junction transistor that offers unparalleled performance and reliability. Designed for amplifier applications, this small signal BJT is perfect for enhancing the functionality of your circuits. With a maximum collector-emitter voltage of 12V and a minimum DC current gain of 270, this transistor delivers exceptional power dissipation of 0.5W. Invest in the best with ROHM and experience the value and benefits this product brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances ease of use for the user.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB integration, saving space and time during assembly.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into various electronic designs.

Terminal Form: FLAT

Flat terminals provide secure connectivity and ease of soldering during assembly.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this transistor can handle increased power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact designs.

Minimum DC Current Gain (hFE): 270

High DC current gain ensures efficient signal amplification and performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 12 V

With a high maximum voltage rating, this transistor can withstand high voltage applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in transistor operation.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows for handling of larger currents, ideal for amplifier applications.

Terminal Finish: TIN COPPER

Tin copper terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Case Connection: COLLECTOR

Collector case connection design simplifies circuit design and connectivity.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time allows for quick manufacturing processes and efficient assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability during assembly.

Nominal Transition Frequency (fT): 360 MHz

High nominal transition frequency enables high-speed signal processing and amplification in RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2661T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2661T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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