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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PZT3906,115 by NXP Semiconductors

PZT3906,115

NXP Semiconductors

PZT3906,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 30, and IC of 0.1A. With a max operating temperature of 150°C, it has a fT of 250MHz making it suitable for high-frequency switching circuits.

COLLECTOR

.1 A

4.5 pF

40 V

SINGLE

30

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.5 W

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

300 ns

65 ns

.4 V

2PC1815GR,116 by NXP Semiconductors

2PC1815GR,116

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,116 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max operating temp of 150°C and fT of 80MHz. The package is cylindrical with through-hole terminals, making it suitable for various electronic circuits.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

PH2369,116 by NXP Semiconductors

PH2369,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PN2907A,116 by NXP Semiconductors

PN2907A,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

365 ns

40 ns

1.6 V

DXT690BP5Q-13 by Diodes Incorporated

DXT690BP5Q-13

Diodes Incorporated

DXT690BP5Q-13 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 60, and VCE max of 45V. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high fT of 150MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

60

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

2N4401-AP by Micro Commercial Components

2N4401-AP

Micro Commercial Components

2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.6 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

250 MHz

255 ns

35 ns

2SC3279-L-AP by Micro Commercial Components

2SC3279-L-AP

Micro Commercial Components

2SC3279-L-AP by Micro Commercial Components is a NPN BJT with hFE of 140 and fT of 150 MHz. It operates at up to 150°C, handles a max voltage of 10V, and max current of 2A. Ideal for small signal applications in electronics due to its high transition frequency and current capacity.

2 A

10 V

SINGLE

140

TO-92

O-PBCY-W3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

150 MHz

BC546B-AP by Micro Commercial Components

BC546B-AP

Micro Commercial Components

BC546B-AP by Micro Commercial Components is a NPN bipolar junction transistor (BJT) with a min DC current gain of 200. It is commonly used as an amplifier in various applications. With a max operating temperature of 150°C and a max collector-emitter voltage of 65V, it offers reliable performance.

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

300 MHz

MPSA92-AP by Micro Commercial Components

MPSA92-AP

Micro Commercial Components

MPSA92-AP by Micro Commercial Components is a PNP BJT with hFE of 80, VCE of 300V, and fT of 50MHz. Ideal for low-power applications in electronics due to its high voltage and current capabilities.

.3 A

300 V

SINGLE

80

TO-92

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

NO

Matte Tin (Sn)

WIRE

BOTTOM

10

SILICON

50 MHz

2SC1815-GR-AP by Micro Commercial Components

2SC1815-GR-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-GR-AP is a NPN BJT transistor with hFE of 120, ideal for amplifier applications. With a max VCE of 50V and IC of 0.15A, it operates up to 125°C. Featuring a fT of 80MHz, this through-hole transistor has a cylindrical package body suitable for various electronic designs.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-AP by Micro Commercial Components

2SC1815-Y-AP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-AP is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. Package style is cylindrical with matte tin finish in a plastic/epoxy body.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

2SC1815-Y-BP by Micro Commercial Components

2SC1815-Y-BP

Micro Commercial Components

Micro Commercial Components' 2SC1815-Y-BP is a NPN BJT with hFE of 120, VCE of 50V, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 80MHz and operating temperature up to 125°C. The transistor's cylindrical package with matte tin finish makes it suitable for through-hole mounting.

.15 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

80 MHz

DCP68-25-13 by Diodes Incorporated

DCP68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

330 MHz

.5 V

DCX68-25-13 by Diodes Incorporated

DCX68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

330 MHz

DCX69-25-13 by Diodes Incorporated

DCX69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

FMMT491-TP by Micro Commercial Components

FMMT491-TP

Micro Commercial Components

FMMT491-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals, hFE of 80, and max. power dissipation of 0.5W. Ideal for small signal applications in electronics due to its high transition frequency of 150MHz and max. collector-emitter voltage of 60V.

1 A

60 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

MMBT2907AT-TP by Micro Commercial Components

MMBT2907AT-TP

Micro Commercial Components

MMBT2907AT-TP by Micro Commercial Components is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and operates at up to 150°C. Ideal for amplifier applications, it features a min hFE of 100 and can handle a max collector current of 0.6A.

.6 A

60 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

100 ns

45 ns

DNLS412E-13 by Diodes Incorporated

DNLS412E-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

12 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DPLS315E-13 by Diodes Incorporated

DPLS315E-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

15 V

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FMMT493-TP by Micro Commercial Components

FMMT493-TP

Micro Commercial Components

FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.

1 A

100 V

SINGLE

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

2DD2098R-13 by Diodes Incorporated

2DD2098R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

220 MHz

BC859BLT1 by Onsemi

BC859BLT1

Onsemi

BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.

.1 A

30 V

SINGLE

220

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

100 MHz

BCX71JLT1 by Onsemi

BCX71JLT1

Onsemi

BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.

.1 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.35 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

800 ns

150 ns

MMBT4126LT1 by Onsemi

MMBT4126LT1

Onsemi

MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.

.2 A

25 V

SINGLE

60

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.225 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

250 MHz

PN2222ARLRA by Onsemi

PN2222ARLRA

Onsemi

PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2222ARLRP by Onsemi

PN2222ARLRP

Onsemi

PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

BCX56-10R1 by Onsemi

BCX56-10R1

Onsemi

BCX56-10R1 by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. It is used in amplifier applications due to its 1.56W power dissipation, small outline package style, and high DC current gain of 25 hFE. The transistor's flat terminal form and single terminal position make it suitable for surface mount configurations.

1 A

80 V

SINGLE

25

R-PSSO-F3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.56 W

Not Qualified

Other Transistors

YES

TIN LEAD

FLAT

SINGLE

AMPLIFIER

SILICON

130 MHz

MMJT350T1 by Onsemi

MMJT350T1

Onsemi

MMJT350T1 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 2.75W, hFE of 20, and can handle up to 300V collector-emitter voltage. The package style is small outline, making it suitable for surface mount designs in various electronic circuits.

COLLECTOR

.5 A

300 V

SINGLE

20

TO-261AA

R-PDSO-G4

e0

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

2.75 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

STX13003 by STMicroelectronics

STX13003

STMicroelectronics

STX13003 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1.5W and max. collector current of 1A, suitable for circuits requiring high voltage and current handling capabilities in a cylindrical package style.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

2SA1038STPR by ROHM

2SA1038STPR

ROHM

ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.

.05 A

120 V

SINGLE

180

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2SA1038STPS by ROHM

2SA1038STPS

ROHM

ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.

.05 A

120 V

SINGLE

270

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2DA1774Q-7 by Diodes Incorporated

2DA1774Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

120

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774R-7 by Diodes Incorporated

2DA1774R-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

2DA1774S-7 by Diodes Incorporated

2DA1774S-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

140 MHz

BC847AT-7 by Diodes Incorporated

BC847AT-7

Diodes Incorporated

BC847AT-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 110, and max IC of 0.1A. It operates up to 150°C, has VCE of 45V, and fT of 100MHz. Widely used in small signal applications due to its compact size and high transition frequency.

.1 A

45 V

SINGLE

110

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC847BT-7 by Diodes Incorporated

BC847BT-7

Diodes Incorporated

BC847BT-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.15W and min DC current gain of 200. It operates at up to 150°C, has a max collector-emitter voltage of 45V, and is ideal for small signal applications in electronics due to its high transition frequency of 100MHz.

.1 A

45 V

SINGLE

200

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857AT-7 by Diodes Incorporated

BC857AT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857BT-7 by Diodes Incorporated

BC857BT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

MMBT2222AT-7 by Diodes Incorporated

MMBT2222AT-7

Diodes Incorporated

Diodes Inc. MMBT2222AT-7 is a NPN BJT with max. Vce of 40V, Ic of 0.6A, and fT of 300MHz. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation capabilities. Suitable for surface mount designs requiring fast switching speeds and moderate current handling.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMBT2907AT-7 by Diodes Incorporated

MMBT2907AT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

.6 A

60 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

200 MHz

100 ns

45 ns

MMBT3904T-7 by Diodes Incorporated

MMBT3904T-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

MMBT4401T-7 by Diodes Incorporated

MMBT4401T-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V

MMBT4403T-7 by Diodes Incorporated

MMBT4403T-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE

20

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

200 MHz

255 ns

35 ns

BC488BRL1 by Onsemi

BC488BRL1

Onsemi

BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.

EUROPEAN PART NUMBER

1 A

60 V

SINGLE

15

TO-92

O-PBCY-T3

e0

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC639-16ZL1 by Onsemi

BC639-16ZL1

Onsemi

BC639-16ZL1 by Onsemi is a NPN BJT with max. power dissipation of 0.8W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, suitable for temperatures up to 150 °C and operating at a nominal transition frequency of 200MHz.

EUROPEAN PART NUMBER

1 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.8 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

MSC3930-BT1 by Onsemi

MSC3930-BT1

Onsemi

MSC3930-BT1 by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style for surface mount assembly.

.03 A

20 V

SINGLE

70

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

150 MHz

NSL12AWT1 by Onsemi

NSL12AWT1

Onsemi

NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.

2 A

12 V

SINGLE

100

R-PDSO-G6

e0

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

61095 by Micropac Industries

61095

Micropac Industries

Micropac Industries' 61095 is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Features include max. power dissipation of 0.4W, min. DC current gain of 100, and max. operating temp of 200°C. Package style is cylindrical with wire terminals in a round shape.

.6 A

60 V

SINGLE

100

TO-18

O-MBCY-W3

1

3

200 Cel

METAL

ROUND

CYLINDRICAL

PNP

.4 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

SWITCHING

SILICON

300 ns

45 ns