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NSL12AWT1

Onsemi

NSL12AWT1 by Onsemi

NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 89,695 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

89,695

-

$0.172

$0.143

$0.127

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

84,000

-

-

-

$0.159

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,228 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

-

10k+ parts

-

2,228

$0.134

-

-

-

Greenchips

USA . 6,000 parts In-Stock

1+ parts

$0.135

100+ parts

$0.132

1k+ parts

$0.120

10k+ parts

$0.120

6,000

$0.135

$0.132

$0.120

$0.120

SIE Connect GmbH - GreenChips

Germany . 6,000 parts In-Stock

1+ parts

-

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6,000

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-

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Vyrian

USA . 3,645 parts In-Stock

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3,645

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 985 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

985

$0.127

-

-

-

Corohmni

South Africa . 240 parts In-Stock

1+ parts

$0.135

100+ parts

-

1k+ parts

-

10k+ parts

-

240

$0.135

-

-

-

AZTECH Wire

Italy . 249 parts In-Stock

1+ parts

$16.780

100+ parts

-

1k+ parts

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10k+ parts

-

249

$16.780

-

-

-

Continental Prestige Electronics

USA . 89,695 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.127

10k+ parts

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89,695

-

-

$0.127

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Problanco Electronics

Mexico . 8,391 parts In-Stock

1+ parts

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8,391

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TANS Electronics

Latvia . 7,324 parts In-Stock

1+ parts

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7,324

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-

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Kulean Microsystems

USA . 4,540 parts In-Stock

1+ parts

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100+ parts

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4,540

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Assy Fe

Spain . 3,280 parts In-Stock

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3,280

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SupplyDigital Components

Austria . 2,636 parts In-Stock

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2,636

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UHIMA Technologies

Türkiye . 243 parts In-Stock

1+ parts

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243

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Overview

Enhance your electronic projects with the high-quality NSL12AWT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and versatile small signal bipolar junction transistors that are perfect for switching applications. The NSL12AWT1 offers excellent performance and efficiency, with a maximum collector-emitter voltage of 12V and a maximum collector current of 2A. Its compact package design and surface mount capability make it ideal for space-constrained projects. Trust Onsemi to provide you with the innovative solutions you need to bring your designs to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation properties and helps in reducing the overall weight of the transistor.

Polarity or Channel Type: PNP

Being a PNP transistor, it allows for easy integration into circuits that require PNP-type transistors, making it versatile for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into circuits, making it easier to work with.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for use in digital circuits or power management systems.

Surface Mount: YES

The surface mount capability makes it easy to mount the transistor onto circuit boards, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard form factor for easy integration into various electronic devices or circuits.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering onto circuit boards, ensuring a secure and reliable connection.

No. of Terminals: 6

The 6 terminals provide flexibility in circuit design and connectivity options, enabling complex electronic applications.

Maximum Power Dissipation (Abs): 0.65 W

The high maximum power dissipation capability ensures the transistor can handle high power levels without overheating or damaging the device.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs, ideal for applications with limited board space.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain ensures reliable amplification of current signals, making the transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, making it reliable in harsh environments.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage capability allows for operation in circuits with higher voltages, expanding the range of applications the transistor can be used in.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing good electrical properties and durability for long-term performance.

Maximum Collector Current (IC): 2 A

The high maximum collector current capability allows the transistor to handle high current levels, making it suitable for power applications that require robust current handling.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish ensures good solderability and conductivity, enabling a secure and low-resistance connection to circuit boards.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit board layout and allows for versatile mounting options in different orientations.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures that the transistor can withstand reflow soldering processes without damage, maintaining its reliability during assembly.

Peak Reflow Temperature °C: 235

The high peak reflow temperature capability allows the transistor to endure the elevated temperatures of the reflow soldering process, ensuring proper soldering and connection to circuit boards.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for fast-switching applications or high-speed circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSL12AWT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSL12AWT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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