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NSL12AWT1G

Onsemi

NSL12AWT1G by Onsemi

NSL12AWT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a max operating temperature of 150 °C and a transition frequency of 100MHz. Ideal for switching applications in small outline packages.

Median Price

$0.113

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Rochester

USA . 312,892 parts In-Stock

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-

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$0.122

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$0.102

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$0.090

312,892

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$0.122

$0.102

$0.090

Farnell

UK . 309,892 parts In-Stock

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$0.104

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Verical

USA . 147,500 parts In-Stock

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$0.113

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Digiode

USA . 2,290 parts In-Stock

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$0.100

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$0.100

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 6,659 parts In-Stock

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Flip Electronics

USA . 6,000 parts In-Stock

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PC Components Company LLC

USA . 3,409 parts In-Stock

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Microfarads

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Tectiva GmbH

Germany . 3,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 3,000 parts In-Stock

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NPI Materials, Inc.

USA . 2,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,908 parts In-Stock

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Dan-Mar Components

USA . 1,908 parts In-Stock

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Whistler Technology

UK . 905 parts In-Stock

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Speed Components Ltd

Israel . 718 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,830 parts In-Stock

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$0.094

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Corohmni

South Africa . 405 parts In-Stock

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$0.104

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Component Stockers USA

USA . 233,199 parts In-Stock

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$0.110

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$0.100

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$0.090

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$0.090

233,199

$0.110

$0.100

$0.090

$0.090

AZTECH Wire

Italy . 986 parts In-Stock

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$9.900

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Continental Prestige Electronics

USA . 309,892 parts In-Stock

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RC Electronics

USA . 85,387 parts In-Stock

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Perfect Parts

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Kepictronics

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Authorized Procurement Solutions

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

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GreenTree Electronics

Israel . 2,245 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,234 parts In-Stock

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Assy Fe

Spain . 2,043 parts In-Stock

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Futuretech Components

Singapore . 524 parts In-Stock

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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Overview

Enhance your electronic projects with the NSL12AWT1G by Onsemi! Designed with top-quality materials and precision engineering, this Small Signal Bipolar Junction Transistor offers superior performance and reliability. Ideal for switching applications, this PNP transistor in a convenient surface-mount package is perfect for a wide range of projects. With a high DC current gain and low power dissipation, this transistor provides exceptional value and efficiency. Trust Onsemi for cutting-edge technology and elevate your designs to the next level with the NSL12AWT1G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for components that require good mechanical strength and protection against environmental factors, making it a durable choice for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this product suitable for switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and is ideal for applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact assembly of the transistor, making it suitable for modern PCB designs.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate this transistor into various circuit layouts and designs.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting the transistor to other components and circuitry.

Maximum Power Dissipation (Abs): 0.65 W

With a high maximum power dissipation, this transistor can handle higher loads without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact designs where size is a constraint.

Minimum DC Current Gain (hFE): 100

Having a minimum DC current gain of 100 ensures stable and consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C allows for reliable performance in high-temperature environments.

Maximum Collector-Emitter Voltage: 12 V

Suitable for applications requiring up to 12V collector-emitter voltage, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high performance and reliability in various applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle higher current loads, making it suitable for power circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity, ensuring secure connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper reflow soldering of the component onto the PCB.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz indicates fast switching speeds and excellent high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSL12AWT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSL12AWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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