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BCX71JLT1

Onsemi

BCX71JLT1 by Onsemi

BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.

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Chip Stock

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Vyrian

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ComSIT Distribution GmbH

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PC Components Company LLC

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Bristol Electronics

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Martec Srl

Italy . 1,618 parts In-Stock

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Digiode

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Nova Conductors

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Aztec Data Supply Inc.

USA . 3,782 parts In-Stock

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$1.954

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AZTECH Wire

Italy . 557 parts In-Stock

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$11.410

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Semicontronic

India . 945 parts In-Stock

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$18.050

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$17.599

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$17.508

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Ampacity Inc.

Singapore . 574 parts In-Stock

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$57.050

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Component Stockers USA

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TANS Electronics

Latvia . 7,489 parts In-Stock

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Problanco Electronics

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Continental Prestige Electronics

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Argo Parts USA

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SupplyDigital Components

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Overview

Unlock the potential of your electronics with the BCX71JLT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers versatility and efficiency in various applications. With its PNP polarity, single configuration, and Gull Wing terminal form, this product is perfect for surface mount projects. Experience seamless performance with a maximum collector-emitter voltage of 45V and a minimum DC current gain of 100. Trust Onsemi to provide you with cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material helps in providing a cost-effective and lightweight solution for the transistor.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, making it versatile for a variety of applications.

Configuration: SINGLE

Having a single configuration simplifies circuit design and reduces complexity, making it easier to use in various electronics projects.

Surface Mount: YES

Being surface mountable enables easy and efficient assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape offers stability and ease of handling during assembly, ensuring proper alignment on the PCB.

Terminal Form: GULL WING

The gull wing terminal form provides secure mounting and reliable connection points on the PCB, minimizing the risk of disconnection.

No. of Terminals: 3

Having 3 terminals allows for easy connection to other components in the circuit, offering flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35 W, this transistor can handle moderate power levels, making it suitable for various low-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices where size is a constraint.

Minimum DC Current Gain (hFE): 100

Having a minimum DC current gain of 100 ensures consistent and reliable amplification of signals in the circuit, enhancing overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance even in demanding operating conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage of 45 V allows for operation in circuits with higher voltage requirements, providing versatility in use.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers excellent thermal conductivity and stability, ensuring long-term reliability.

Maximum Turn On Time (ton): 150 ns

With a maximum turn on time of 150 ns, this transistor responds quickly to input signals, making it suitable for high-speed applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for handling moderate current levels, making it suitable for various low to medium power applications.

Maximum Turn Off Time (toff): 800 ns

The maximum turn off time of 800 ns ensures quick switching off of the transistor, enhancing the efficiency of the circuit.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and reliability in terms of electrical connection, ensuring a secure and durable assembly.

Terminal Position: DUAL

The dual terminal position allows for easy mounting and connection in the circuit, offering flexibility in placement and orientation.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor can withstand the solder reflow process during assembly.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235°C ensures reliable soldering and assembly, making it suitable for lead-free processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX71JLT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

800 ns

Maximum Turn On Time (ton):

150 ns

Trade Compliance

BCX71JLT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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