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BCX70JE6327HTSA1

Infineon Technologies

BCX70JE6327HTSA1 by Infineon Technologies

BCX70JE6327HTSA1 by Infineon Technologies is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It is commonly used for switching applications and has a min DC current gain of 90 (hFE).

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11 parts In-Stock

1+ parts

$0.380

100+ parts

$0.166

1k+ parts

$0.091

10k+ parts

$0.080

11

$0.380

$0.166

$0.091

$0.080

Verical

USA . 192,000 parts In-Stock

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Rochester

USA . 139,106 parts In-Stock

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$0.050

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$0.041

10k+ parts

$0.037

139,106

-

$0.050

$0.041

$0.037

Arrow

USA . 27,000 parts In-Stock

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27,000

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EBV Elektronik

Germany . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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Digiode

USA . 633 parts In-Stock

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$0.025

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633

$0.025

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Nova Conductors

Japan . 900 parts In-Stock

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$0.082

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900

$0.082

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Vyrian

USA . 113,521 parts In-Stock

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113,521

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Chip Stock

USA . 24,620 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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3,000

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NAC Semi

USA . 3,000 parts In-Stock

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$0.178

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$0.178

VNN

France . 2,483 parts In-Stock

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2,483

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Distributors (Availability)

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Semicontronic

India . 112,005 parts In-Stock

1+ parts

$0.022

100+ parts

$0.021

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$0.021

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112,005

$0.022

$0.021

$0.021

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Ampacity Inc.

Singapore . 111,714 parts In-Stock

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$0.022

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111,714

$0.022

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Corphita

USA . 68 parts In-Stock

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$0.023

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68

$0.023

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Continental Prestige Electronics

USA . 6,959 parts In-Stock

1+ parts

$0.082

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$0.081

6,959

$0.082

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-

$0.081

Argo Parts USA

USA . 2,258 parts In-Stock

1+ parts

$0.082

100+ parts

-

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$0.080

2,258

$0.082

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$0.080

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

$0.078

10k+ parts

$0.077

50

$0.082

-

$0.078

$0.077

Component Stockers USA

USA . 230,182 parts In-Stock

1+ parts

$0.360

100+ parts

$0.120

1k+ parts

$0.070

10k+ parts

$0.040

230,182

$0.360

$0.120

$0.070

$0.040

Corohmni

South Africa . 364 parts In-Stock

1+ parts

$0.491

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364

$0.491

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Modulus Dynamics

Lithuania . 5,290 parts In-Stock

1+ parts

$1.084

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$1.041

1k+ parts

$0.997

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5,290

$1.084

$1.041

$0.997

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.211

100+ parts

$1.102

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$0.993

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40

$1.211

$1.102

$0.993

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Aztec Data Supply Inc.

USA . 182 parts In-Stock

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$1.309

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Perfect Parts

USA . 285,443 parts In-Stock

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Eastek

USA . 84,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,760 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Overview

Discover the BCX70JE6327HTSA1, a high-quality Small Signal Bipolar Junction Transistor (BJT) by Infineon Technologies. Designed for switching applications, this NPN transistor offers customers exceptional value and benefits. With its surface mount and compact rectangular package shape, it is easy to integrate into various electronic devices. The BCX70JE6327HTSA1's reliable performance, maximum collector-emitter voltage of 45V, and maximum collector current of 0.1A make it ideal for a wide range of applications. Trust in Infineon Technologies' expertise and choose the BCX70JE6327HTSA1 for superior results in your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a plastic/epoxy package body material, which provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

With NPN polarity, this transistor allows for easy integration into NPN-based circuit designs, providing efficient signal amplification or switching capabilities.

Configuration: SINGLE

The single configuration of this transistor simplifies circuit design and enables easy implementation, making it a convenient choice for various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels in rapidly controlling the flow of current, making it suitable for numerous electronic devices and systems.

Surface Mount: YES

The surface mount feature allows this transistor to be easily mounted on a PCB, saving space and enabling efficient assembly processes in electronic manufacturing.

Package Shape: RECTANGULAR

Featuring a rectangular package shape, this transistor allows for efficient use of board space, making it an ideal choice for compact electronic designs with limited size constraints.

Terminal Form: GULL WING

The gull wing terminal form offers reliable solder joint connections, enhancing the overall stability and longevity of the transistor, making it suitable for demanding environments.

No. of Elements: 1

With a single element, this transistor simplifies circuit design and minimizes complexity, making it suitable for various electronic applications.

No. of Terminals: 3

The transistor's three terminals facilitate easy integration into electronic circuits, providing flexibility and enabling efficient signal control.

Package Style (Meter): SMALL OUTLINE

Featuring a small outline package style, this transistor is compact and space-saving, ideal for applications requiring miniaturization or when board space is limited.

Minimum DC Current Gain (hFE): 90

With a minimum DC current gain of 90, this transistor ensures reliable and consistent amplification of weak signals, making it a good choice for precision analog circuitry.

Maximum Collector-Emitter Voltage: 45 V

With a high maximum collector-emitter voltage capability of 45V, this transistor can handle higher voltage levels, expanding its usability in a wide range of electronic applications.

Transistor Element Material: SILICON

Utilizing silicon as the transistor element material ensures high performance and reliability, making it a preferred choice for demanding applications that require enhanced thermal stability and efficiency.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle higher current levels, making it suitable for applications requiring robust current flow control.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability, ensuring reliable electrical connections and easy soldering during assembly, making this transistor a reliable choice for manufacturing processes.

Terminal Position: DUAL

Featuring a dual terminal position, this transistor offers versatility in circuit design and ease of connection, making it suitable for a wide range of applications.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor is highly resistant to moisture, ensuring its durability and reliability in humid or damp environments.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this transistor exhibits excellent high-frequency performance, making it suitable for high-speed switching applications or RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX70JE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX70JE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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