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PN2222ARLRA

Onsemi

PN2222ARLRA by Onsemi

PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

4,000

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

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Digiode

USA . 2,317 parts In-Stock

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$0.051

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2,317

$0.051

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 4,172 parts In-Stock

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Bristol Electronics

USA . 3,479 parts In-Stock

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3,479

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PC Components Company LLC

USA . 2,740 parts In-Stock

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2,740

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Inventory MP

USA . 2,450 parts In-Stock

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2,450

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Connector Distribution Corp

USA . 2,000 parts In-Stock

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Right Parts Inc.

USA . 2,000 parts In-Stock

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Atlantic Semiconductor

USA . 1,029 parts In-Stock

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1,029

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Resion

USA . 380 parts In-Stock

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380

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Distributors (Availability)

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Corphita

USA . 811 parts In-Stock

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$0.049

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811

$0.049

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Corohmni

South Africa . 70 parts In-Stock

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$0.054

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70

$0.054

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AZTECH Wire

Italy . 683 parts In-Stock

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$10.520

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683

$10.520

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SupplyDigital Components

Austria . 7,228 parts In-Stock

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Kulean Microsystems

USA . 6,031 parts In-Stock

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TANS Electronics

Latvia . 4,125 parts In-Stock

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Problanco Electronics

Mexico . 3,360 parts In-Stock

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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532

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Overview

Enhance your electronic projects with the PN2222ARLRA by Onsemi, a high-quality NPN bipolar junction transistor that is perfect for switching applications. Manufactured by Onsemi, a leader in semiconductor technology, this small signal BJT offers reliability and performance that you can trust. Whether you're building circuits for amplification or control systems, this transistor provides value and versatility. With a maximum collector-emitter voltage of 40V and a transition frequency of 300 MHz, the PN2222ARLRA ensures efficient operation and dependable results. Upgrade your designs with this top-notch component from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits.

Configuration: SINGLE

Simplified circuit design and easier to manage.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently even in high temperature environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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