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2N4401-AP

Micro Commercial Components

2N4401-AP by Micro Commercial Components

2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

Median Price

$0.181

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Chip1Stop

Japan . 6,719 parts In-Stock

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$0.126

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Arrow

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Verical

USA . 263 parts In-Stock

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Nova Conductors

Japan . 59 parts In-Stock

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$9.257

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Vyrian

USA . 9,558 parts In-Stock

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VNN

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Inventory MP

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Bristol Electronics

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NAC Semi

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Semtec, LLC

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Elcom Components

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Prism Electronics

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Ampacity Inc.

Singapore . 4,654 parts In-Stock

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Semicontronic

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Aztec Data Supply Inc.

USA . 1,718 parts In-Stock

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$1.435

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Microchip USA

USA . 1,650 parts In-Stock

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$2.860

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$2.840

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$2.830

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$2.820

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$2.840

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$2.820

Continental Prestige Electronics

USA . 5,488 parts In-Stock

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$9.257

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$9.072

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Netroflash

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Corohmni

South Africa . 13 parts In-Stock

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$9.409

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$9.691

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$9.207

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Authorized Procurement Solutions

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Perfect Parts

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Argo Parts USA

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Overview

Enhance your electronic projects with the 2N4401-AP by Micro Commercial Components, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifying signals. Manufactured with precision and expertise, this NPN transistor offers reliable performance and durability. Whether you are working on audio amplifiers, signal processing circuits, or voltage regulators, this transistor's versatility and efficiency will elevate your designs. Trust in the value and benefits of the 2N4401-AP to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and resistance to heat and chemicals, making the transistor reliable in a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their high input impedance and fast switching speeds.

Configuration: SINGLE

A single configuration simplifies circuit design and allows for easier integration into a variety of applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for high-gain applications such as audio amplifiers or sensor interfaces.

Package Shape: ROUND

The round package shape allows for easy mounting and ensures a compact design for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a mechanically strong connection, making them suitable for applications where vibration or mechanical stress is a concern.

Maximum Power Dissipation (Abs): 0.6 W

With a high maximum power dissipation, this transistor can handle surges in power without overheating, ensuring stable performance.

Minimum DC Current Gain (hFE): 40

A high minimum DC current gain ensures consistent amplification and signal processing, making this transistor reliable in critical applications.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage makes this transistor suitable for high-voltage applications, providing a wide operating range.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them suitable for a wide range of applications.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time ensures quick response and high-speed switching, making this transistor ideal for applications requiring fast signal processing.

Maximum Turn Off Time (toff): 255 ns

The fast turn-off time allows for rapid switching between on and off states, improving overall efficiency in signal processing applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides a stable and reliable connection, reducing the risk of oxidation and ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for easy soldering, making installation and maintenance hassle-free.

Maximum Time At Peak Reflow Temperature (s): 10

The short time at peak reflow temperature minimizes thermal stress on the transistor, ensuring long-term reliability and stable performance.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and ensures a strong mechanical connection, even in temperature extremes.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency, this transistor can handle high-frequency signals with minimal distortion, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4401-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Micro Commercial Components

Specs

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4401-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Micro Commercial Components

MCC offers a broad range of solutions with ready to go design solutions in various segments such as Automotive, Industrial, Computing & Personal Electronics and Consumer.

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