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2N4401TF

Onsemi

2N4401TF by Onsemi

2N4401TF by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.075

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$0.071

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$0.071

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1,000

$0.075

$0.071

$0.071

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Mouser Electronics

USA . 12,595 parts In-Stock

1+ parts

$0.290

100+ parts

$0.112

1k+ parts

$0.073

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$0.055

12,595

$0.290

$0.112

$0.073

$0.055

DigiKey

USA . 25,585 parts In-Stock

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$0.054

25,585

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Future Electronics

Canada . 18,000 parts In-Stock

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$0.046

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Newark

USA . 14,000 parts In-Stock

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$0.056

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Farnell

UK . 12,982 parts In-Stock

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$0.084

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$0.082

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Element14

Singapore . 12,982 parts In-Stock

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$0.140

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$0.138

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Rochester

USA . 8,398 parts In-Stock

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$0.045

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$0.037

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$0.033

8,398

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$0.045

$0.037

$0.033

RS (Exports)

UK . 4,600 parts In-Stock

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4,600

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Verical

USA . 4,000 parts In-Stock

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$0.060

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Master Electronics

USA . 4,000 parts In-Stock

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Chip1Stop

Japan . 3,680 parts In-Stock

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$0.036

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3,680

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$0.035

$0.035

Arrow

USA . 2,970 parts In-Stock

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100+ parts

$0.097

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$0.066

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$0.037

2,970

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$0.097

$0.066

$0.037

Distributors (In-Stock)

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Digiode

USA . 922 parts In-Stock

1+ parts

$0.035

100+ parts

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922

$0.035

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Nova Conductors

Japan . 100 parts In-Stock

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$0.074

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100

$0.074

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TME

Poland . 1,638 parts In-Stock

1+ parts

$0.270

100+ parts

$0.097

1k+ parts

$0.061

10k+ parts

$0.046

1,638

$0.270

$0.097

$0.061

$0.046

Chip Stock

USA . 64,000 parts In-Stock

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Flip Electronics

USA . 52,000 parts In-Stock

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IBS Electronics

USA . 31,200 parts In-Stock

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$0.065

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NAC Semi

USA . 18,000 parts In-Stock

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$0.095

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Vyrian

USA . 12,011 parts In-Stock

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Bristol Electronics

USA . 2,410 parts In-Stock

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Inventory MP

USA . 1,900 parts In-Stock

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VNN

France . 1,045 parts In-Stock

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Diverse Electronics

Canada . 1,000 parts In-Stock

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PC Components Company LLC

USA . 510 parts In-Stock

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510

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EMSNET

USA . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,797 parts In-Stock

1+ parts

$0.027

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11,797

$0.027

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Semicontronic

India . 11,626 parts In-Stock

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$0.027

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$0.026

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Corohmni

South Africa . 162 parts In-Stock

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Corphita

USA . 2,477 parts In-Stock

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2,477

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Argo Parts USA

USA . 1,987 parts In-Stock

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$0.074

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$0.072

1,987

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$0.072

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$0.074

100+ parts

$0.070

1k+ parts

$0.067

10k+ parts

$0.066

10

$0.074

$0.070

$0.067

$0.066

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.075

100+ parts

$0.071

1k+ parts

$0.071

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1,000

$0.075

$0.071

$0.071

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Continental Prestige Electronics

USA . 13,293 parts In-Stock

1+ parts

$0.252

100+ parts

$0.072

1k+ parts

$0.037

10k+ parts

$0.032

13,293

$0.252

$0.072

$0.037

$0.032

Aztec Data Supply Inc.

USA . 1,098 parts In-Stock

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$0.462

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Perfect Parts

USA . 17,823 parts In-Stock

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Kepictronics

USA . 16,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 7,430 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,603 parts In-Stock

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Robosynatics

Brazil . 5,000 parts In-Stock

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$5.192

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$5.192

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$5.192

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$5.192

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$5.192

Lucentia Tech

USA . 5,000 parts In-Stock

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$5.192

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$5.192

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$5.192

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$5.192

iodParts Technologies Inc.

India . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,023 parts In-Stock

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SupplyDigital Components

Austria . 2,666 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,257 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,285 parts In-Stock

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Supply Digital

USA . 823 parts In-Stock

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823

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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508

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Overview

Upgrade your electronic devices with the 2N4401TF by Onsemi, a high-quality NPN Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this transistor offers reliability and superior performance. With its maximum collector-emitter voltage of 40V and fast turn-on/off times, this transistor provides great value and benefits to customers looking for a durable and efficient component for their electronic projects. Discover the endless possibilities this transistor can bring to your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for applications requiring a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast turn on/off times and efficient performance in switching circuits.

Package Shape: ROUND

Compact and space-saving form factor, suitable for designs where space is limited or aesthetics are important.

Terminal Form: THROUGH-HOLE

Easy to solder and suitable for through-hole PCB mounting, ensuring secure connections and ease of assembly.

Maximum Power Dissipation (Abs): 0.35 W

Capable of handling moderate power dissipation, suitable for low to medium power applications without the risk of overheating.

Minimum DC Current Gain (hFE): 40

A high minimum DC current gain provides consistent and reliable amplification, ensuring stable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, allowing for use in demanding environments without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum voltage rating, the transistor can safely handle fluctuations in voltage without breakdown, ensuring long-term operation.

Transistor Element Material: SILICON

Silicon transistors offer high-performance characteristics, such as low noise and high gain, making them ideal for various electronic applications.

Maximum Turn On Time (ton): 35 ns

Fast turn on time ensures quick response in switching applications, reducing switching losses and improving overall efficiency.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate collector currents, suitable for applications requiring higher current levels without compromising performance.

Maximum Turn Off Time (toff): 255 ns

Efficient turn off time reduces switching times and improves overall circuit performance, especially in high-speed applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring robust connections and long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, simplifying assembly and ensuring proper alignment in the circuit.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for high-frequency operation, making this transistor suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4401TF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4401TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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