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BC847BT-7

Diodes Incorporated

BC847BT-7 by Diodes Incorporated

BC847BT-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.15W and min DC current gain of 200. It operates at up to 150°C, has a max collector-emitter voltage of 45V, and is ideal for small signal applications in electronics due to its high transition frequency of 100MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 17,813 parts In-Stock

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17,813

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VNN

France . 4,434 parts In-Stock

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4,434

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 1,292 parts In-Stock

1+ parts

$0.670

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1,292

$0.670

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Corohmni

South Africa . 286 parts In-Stock

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$1.921

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286

$1.921

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AZTECH Wire

Italy . 895 parts In-Stock

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$18.814

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895

$18.814

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Ampacity Inc.

Singapore . 1,041 parts In-Stock

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$41.050

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1,041

$41.050

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Semicontronic

India . 814 parts In-Stock

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$41.050

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$40.024

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$39.818

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814

$41.050

$40.024

$39.818

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QUARKTWIN TECHNOLOGY LTD

USA . 25,118 parts In-Stock

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25,118

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Argo Parts USA

USA . 769 parts In-Stock

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769

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Continental Prestige Electronics

USA . 76 parts In-Stock

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76

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Bastille Electronics

Australia . 22 parts In-Stock

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22

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Overview

Enhance your electronic projects with the BC847BT-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This small signal bipolar junction transistor (BJT) is perfect for a wide range of applications, offering customers exceptional value and performance. Whether you're working on amplifiers, oscillators, or switching circuits, the BC847BT-7 delivers superior functionality with its NPN polarity, gull wing terminal form, and high DC current gain. Trust Diodes Incorporated to provide you with the components you need for success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable packaging for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and speed.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic devices.

Surface Mount: YES

Enables easy and efficient PCB mounting, saving space and facilitating automated manufacturing processes.

Maximum Power Dissipation: 0.15 W

Allows the transistor to handle power efficiently without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 200

Ensures high amplification capability and signal accuracy in various circuit designs.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 45 V

Provides a high voltage rating for handling different voltage levels in circuits, enhancing flexibility.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials, ensuring long-term functionality.

Maximum Collector Current (IC): 0.1 A

Allows for sufficient current handling capacity, enabling the transistor to support various loads.

Nominal Transition Frequency (fT): 100 MHz

Offers high-frequency response for fast switching speeds and high-performance signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BT-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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