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MSC3930-BT1

Onsemi

MSC3930-BT1 by Onsemi

MSC3930-BT1 by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style for surface mount assembly.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

3,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 56 parts In-Stock

1+ parts

$0.041

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-

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-

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56

$0.041

-

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Vyrian

USA . 3,397 parts In-Stock

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3,397

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Distributors (Availability)

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Corphita

USA . 2,251 parts In-Stock

1+ parts

$0.039

100+ parts

-

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-

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2,251

$0.039

-

-

-

Component Stockers USA

USA . 4,284 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

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-

4,284

$0.040

$0.040

$0.040

-

Corohmni

South Africa . 413 parts In-Stock

1+ parts

$0.043

100+ parts

-

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413

$0.043

-

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AZTECH Wire

Italy . 878 parts In-Stock

1+ parts

$19.760

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878

$19.760

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Assy Fe

Spain . 15,000 parts In-Stock

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15,000

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A-Z Elektronik GmbH

Germany . 6,143 parts In-Stock

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6,143

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TANS Electronics

Latvia . 5,465 parts In-Stock

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5,465

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Problanco Electronics

Mexico . 4,356 parts In-Stock

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4,356

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Kepictronics

USA . 2,400 parts In-Stock

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2,400

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SupplyDigital Components

Austria . 1,981 parts In-Stock

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1,981

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Kulean Microsystems

USA . 227 parts In-Stock

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227

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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151

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Overview

Enhance the performance of your electronic devices with the MSC3930-BT1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This NPN transistor is perfect for amplifier applications, offering a maximum collector-emitter voltage of 20V and a nominal transition frequency of 150MHz. With a minimum DC current gain of 70, this small signal BJT provides customers with exceptional value and efficiency. Upgrade your electronics with the MSC3930-BT1 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ideal for small signal applications, ensuring reliability and easy handling.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering high input impedance and fast switching speeds.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits without complex configurations.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in signal processing applications.

Surface Mount: YES

Designed for easy mounting on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs, maximizing component density and making it suitable for automated assembly.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections, ensuring reliable electrical connections in electronic circuits.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits, reducing complexity and potential sources of error.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on PCBs, ideal for applications with limited board space.

Minimum DC Current Gain (hFE): 70

High minimum DC current gain ensures stable and consistent amplification of signals in a wide range of applications.

Maximum Collector-Emitter Voltage: 20 V

High maximum collector-emitter voltage rating ensures compatibility with a variety of circuit designs and operating conditions.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, providing high performance and reliability in small signal transistor applications.

Maximum Collector Current (IC): 0.03 A

Sufficient maximum collector current rating for amplification tasks in small signal applications, ensuring reliable operation.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides excellent solderability and conductivity, ensuring secure connections in electronic circuits.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and compatibility with various circuit layouts.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability for reliable soldering during manufacturing processes, ensuring consistent product quality.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency for fast signal processing and high-frequency applications, making it suitable for a wide range of circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC3930-BT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC3930-BT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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