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MSC3930-BT1G

Onsemi

MSC3930-BT1G by Onsemi

MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,818 parts In-Stock

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Digiode

USA . 51 parts In-Stock

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AZTECH Wire

Italy . 295 parts In-Stock

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$17.740

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QUARKTWIN TECHNOLOGY LTD

USA . 20,752 parts In-Stock

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SupplyDigital Components

Austria . 6,836 parts In-Stock

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TANS Electronics

Latvia . 6,638 parts In-Stock

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Problanco Electronics

Mexico . 5,485 parts In-Stock

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UHIMA Technologies

Türkiye . 739 parts In-Stock

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739

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Corphita

USA . 293 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Kulean Microsystems

USA . 40 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MSC3930-BT1G Small Signal Bipolar Junction Transistor (BJT) from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in every component. This NPN transistor is ideal for amplifier applications, offering a maximum collector-emitter voltage of 20V and a nominal transition frequency of 150MHz. With its surface mount option and compact rectangular package shape, this transistor provides convenience and versatility in a wide range of electronic designs. Trust Onsemi for top-tier components that deliver exceptional value and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor easy to handle and suitable for various applications.

Polarity or Channel Type: NPN

Compatible with a wide range of electronic circuits and common in amplifiers and switches.

Configuration: SINGLE

Simplified design with only one transistor, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Package Shape: RECTANGULAR

Compact shape that fits well on circuit boards, allowing for efficient use of space.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs and provides a reliable connection for stable performance.

No. of Terminals: 3

Simplified 3-terminal design for easy integration into circuits and reduced complexity.

Package Style (Meter): SMALL OUTLINE

Compact size for space-saving designs and suitable for portable electronic devices.

Minimum DC Current Gain (hFE): 70

High minimum current gain ensures reliable and consistent amplification performance.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low-voltage applications, providing safety and reliability in operation.

Transistor Element Material: SILICON

Silicon material offers high performance, stability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 0.03 A

Sufficient collector current rating for low-power applications, ensuring safe operation.

Terminal Finish: Tin (Sn)

Tin finish provides corrosion resistance and good solderability for long-term reliability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and easy connection to external components.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC3930-BT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC3930-BT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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