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MMJT350T1

Onsemi

MMJT350T1 by Onsemi

MMJT350T1 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 2.75W, hFE of 20, and can handle up to 300V collector-emitter voltage. The package style is small outline, making it suitable for surface mount designs in various electronic circuits.

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4

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1k+

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Chip Stock

USA . 79,000 parts In-Stock

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Vyrian

USA . 10,426 parts In-Stock

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Digiode

USA . 853 parts In-Stock

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Prism Electronics

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AZTECH Wire

Italy . 1,074 parts In-Stock

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Kulean Microsystems

USA . 6,086 parts In-Stock

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TANS Electronics

Latvia . 6,083 parts In-Stock

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SupplyDigital Components

Austria . 4,654 parts In-Stock

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Problanco Electronics

Mexico . 4,032 parts In-Stock

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Kepictronics

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Corphita

USA . 1,900 parts In-Stock

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Corohmni

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Overview

Enhance the performance of your electronic devices with the MMJT350T1 by Onsemi. Crafted with top-notch quality and precision by a renowned manufacturer in the industry, this small signal BJT transistor is perfect for various applications in switching circuits. With its PNP polarity, single configuration, and high power dissipation capability, this transistor offers exceptional value, reliability, and efficiency to customers. Upgrade your electronics with the MMJT350T1 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

The PNP configuration makes it suitable for various switching applications in electronic circuits.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed for switching applications, providing fast switching speeds and efficient performance.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on circuit boards, saving space and improving overall circuit performance.

Maximum Power Dissipation (Abs): 2.75 W

With a high maximum power dissipation, this transistor can handle power efficiently without overheating, ensuring reliability in operation.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and makes it easier to solder onto circuit boards.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for various operating conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating allows for the transistor to be used in a wide range of applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in various circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT350T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMJT350T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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