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MMJT9410T1

Onsemi

MMJT9410T1 by Onsemi

MMJT9410T1 by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small outline applications requiring high DC current gain and low collector current.

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1k+

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Digiode

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Inventory MP

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Bristol Electronics

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Maverick Electronics, Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Prism Electronics

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NAC Semi

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AZTECH Wire

Italy . 127 parts In-Stock

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Component Stockers USA

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT) for your electronic projects? Look no further than the MMJT9410T1 by Onsemi. With a maximum power dissipation of 3W and a minimum DC current gain of 60, this NPN transistor is perfect for a wide range of applications. Whether you're working on amplifiers, oscillators, or switching circuits, this component offers high performance and durability. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the MMJT9410T1 brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used configuration that allows for easy integration into circuit designs.

Configuration: SINGLE

Simplifies circuit design and offers straightforward connectivity.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Space-efficient design for compact applications.

Terminal Form: GULL WING

Facilitates easy soldering and connection in surface mount applications.

No. of Terminals: 3

Simple and easy to connect in circuits.

Maximum Power Dissipation (Abs): 3 W

Can handle moderate power levels, making it versatile for various applications.

Package Style (Meter): SMALL OUTLINE

Space-saving design for compact electronic devices.

Minimum DC Current Gain (hFE): 60

Ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Provides stable and consistent performance.

Maximum Collector Current (IC): 0.01 A

Ideal for low current applications.

Terminal Finish: TIN LEAD

Ensures reliable electrical connections.

Terminal Position: DUAL

Offers versatility in circuit configurations.

Moisture Sensitivity Level (MSL): 3

Can withstand moderate moisture exposure during assembly.

Case Connection: COLLECTOR

Clear and defined connection point for easy integration.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable for reflow soldering processes.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures without damage.

Nominal Transition Frequency (fT): 72 MHz

Suitable for high-frequency amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9410T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMJT9410T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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