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MMJT9435T1G

Onsemi

MMJT9435T1G by Onsemi

MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.

Median Price

$0.380

Lifecycle Status

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21

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1k+

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TEDSS.com

USA . 765 parts In-Stock

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$0.250

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Component Electronics Inc.

Canada . 190 parts In-Stock

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$0.380

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$0.290

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Bristol Electronics

USA . 5,595 parts In-Stock

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$0.938

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$0.347

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Vyrian

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Flex Direct, LLC

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Microfarads

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ACDS - Activité Composants Distribution Service

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Ack Elektronik San.Tic.Ltd.Sti

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EPE Components Inc.

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ComSIT Distribution GmbH

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ComSIT USA

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R&J Components

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Atlantic Semiconductor

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Prism Electronics

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Sea View Technologies

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Speed Components Ltd

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Corohmni

South Africa . 499 parts In-Stock

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AZTECH Wire

Italy . 811 parts In-Stock

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$21.050

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Component Stockers USA

USA . 253 parts In-Stock

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Metaverse IC Inc.

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Overview

Enhance your electronic design projects with the MMJT9435T1G PNP Bipolar Junction Transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a variety of applications. With a maximum power dissipation of 3W and a minimum DC current gain of 90, this transistor offers excellent performance in a compact package. Whether you're working on amplifiers, oscillators, or other small signal applications, the MMJT9435T1G provides the value, benefits, and advantages you need to bring your designs to life. Trust Onsemi for top-notch components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy interfacing with other PNP transistors and circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving design.

Package Shape: RECTANGULAR

Rectangular package shape provides efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and connection to the PCB.

Maximum Power Dissipation (Abs): 3 W

High power dissipation rating allows for reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact designs.

Minimum DC Current Gain (hFE): 90

High DC current gain ensures amplification and stability in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating provides flexibility in circuit design and operation.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in the transistor element.

Maximum Collector Current (IC): 3 A

High collector current rating allows for handling larger currents in the circuit.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and connection options.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that the transistor is suitable for a wide range of storage and usage conditions.

Case Connection: COLLECTOR

Collector case connection provides ease of circuit integration and thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

30-second maximum time at peak reflow temperature ensures reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and bonding of the transistor.

Nominal Transition Frequency (fT): 110 MHz

High nominal transition frequency allows for fast switching and high-frequency operation in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9435T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMJT9435T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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