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MMJT9435T3

Onsemi

MMJT9435T3 by Onsemi

MMJT9435T3 by Onsemi is a PNP BJT with 4 terminals, max power dissipation of 3W, and max collector current of 3A. Ideal for small outline applications requiring high DC current gain (hFE) of 90, operating up to 150 °C. Suitable for surface mount designs needing a compact rectangular package with Gull Wing terminals.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

4,000

-

$0.172

$0.143

$0.127

DigiKey

USA . 4,000 parts In-Stock

1+ parts

-

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$0.210

4,000

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-

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$0.210

Verical

USA . 4,000 parts In-Stock

1+ parts

-

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$0.159

4,000

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-

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$0.159

Distributors (In-Stock)

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Digiode

USA . 344 parts In-Stock

1+ parts

$0.134

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-

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344

$0.134

-

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Vyrian

USA . 1,045 parts In-Stock

1+ parts

$0.141

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1,045

$0.141

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Cyclops Electronics Ltd

UK . 336 parts In-Stock

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336

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Distributors (Availability)

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Corphita

USA . 2,202 parts In-Stock

1+ parts

$0.127

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$0.127

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Corohmni

South Africa . 382 parts In-Stock

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$0.141

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382

$0.141

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,000 parts In-Stock

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$0.127

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4,000

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$0.127

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Kulean Microsystems

USA . 3,927 parts In-Stock

1+ parts

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3,927

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Problanco Electronics

Mexico . 3,527 parts In-Stock

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RC Electronics

USA . 3,240 parts In-Stock

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TANS Electronics

Latvia . 1,654 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Futuretech Components

Singapore . 957 parts In-Stock

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957

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UHIMA Technologies

Türkiye . 820 parts In-Stock

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820

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SupplyDigital Components

Austria . 420 parts In-Stock

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420

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Overview

Elevate your electronic designs with the MMJT9435T3 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. With a maximum power dissipation of 3W and a collector-emitter voltage of 30V, this PNP transistor is perfect for a variety of applications. Whether you're working on amplifiers, switches, or signal processing circuits, the MMJT9435T3 delivers exceptional value and benefits to customers looking for superior performance and durability. Trust in Onsemi's expertise and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable housing for the transistor.

Polarity or Channel Type: PNP

Well-suited for various circuit designs and applications.

Configuration: SINGLE

Simplifies the design and integration of the transistor into a circuit.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on PCBs.

Terminal Form: GULL WING

Enhances the mechanical strength of the terminals.

Max Power Dissipation: 3 W

Can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 90

Ensures stable and consistent amplification of signals.

Max Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments.

Max Collector-Emitter Voltage: 30 V

Allows for flexibility in voltage requirements.

Max Collector Current (IC): 3 A

Capable of handling moderate current levels.

Transistor Element Material: SILICON

Provides reliable performance and stability.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures good solderability and reliability of connections.

Moisture Sensitivity Level (MSL): 3

Indicates good moisture resistance for long-term reliability.

Case Connection: COLLECTOR

Simplifies circuit design and connection.

Nominal Transition Frequency (fT): 110 MHz

Provides good high-frequency performance for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9435T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMJT9435T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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