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MMJT9435T1

Onsemi

MMJT9435T1 by Onsemi

MMJT9435T1 by Onsemi is a PNP BJT with 3W power dissipation, 30V max collector-emitter voltage, and 110MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain of 90 (hFE) and compact rectangular package with Gull Wing terminals.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,119 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

2,119

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$0.172

$0.143

$0.127

Distributors (In-Stock)

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Digiode

USA . 285 parts In-Stock

1+ parts

$0.134

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285

$0.134

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Vyrian

USA . 1,582 parts In-Stock

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$0.141

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1,582

$0.141

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DF Sales Co.

USA . 1,980 parts In-Stock

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$0.225

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1,980

$0.225

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DF Sales Co.

USA . 1,980 parts In-Stock

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$0.225

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1,980

$0.225

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Bristol Electronics

USA . 8,250 parts In-Stock

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$0.487

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$0.180

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$0.127

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8,250

$0.487

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$0.127

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Chip Stock

USA . 34,000 parts In-Stock

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Microfarads

USA . 12,154 parts In-Stock

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Dan-Mar Components

USA . 6,415 parts In-Stock

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PC Components Company LLC

USA . 2,511 parts In-Stock

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R&J Components

USA . 2,000 parts In-Stock

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Prism Electronics

USA . 1,907 parts In-Stock

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Semi Source

USA . 1,451 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 950 parts In-Stock

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950

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Inventory MP

USA . 938 parts In-Stock

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938

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Sea View Technologies

USA . 713 parts In-Stock

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Sinequanon

UK . 550 parts In-Stock

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550

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ACDS - Activité Composants Distribution Service

France . 490 parts In-Stock

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490

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Extreme Components

USA . 446 parts In-Stock

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446

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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100

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Connector Distribution Corp

USA . 60 parts In-Stock

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60

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Right Parts Inc.

USA . 60 parts In-Stock

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60

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Resion

USA . 11 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 140 parts In-Stock

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$0.127

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140

$0.127

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Corohmni

South Africa . 61 parts In-Stock

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$0.141

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61

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RC Electronics

USA . 45,000 parts In-Stock

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$0.170

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$0.160

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$0.160

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$0.160

Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,944 parts In-Stock

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TANS Electronics

Latvia . 4,735 parts In-Stock

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Kepictronics

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Perfect Parts

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Kulean Microsystems

USA . 3,220 parts In-Stock

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SupplyDigital Components

Austria . 3,137 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,963 parts In-Stock

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Infinite Electronics LLP (Excess)

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 675 parts In-Stock

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675

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Overview

Discover the power of the MMJT9435T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. With Onsemi's reputation for excellence in manufacturing, this PNP transistor delivers superior functionality in a variety of applications. From amplifiers to switching circuits, the MMJT9435T1 provides customers with a high-quality solution that ensures optimal performance and efficiency. Experience the value and benefits of choosing Onsemi for your electronic component needs with the MMJT9435T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long term durability.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplified design with only one transistor in the package.

Surface Mount: YES

Ease of mounting on circuit boards, saving space and improving signal integrity.

Package Shape: RECTANGULAR

Efficient use of space on the circuit board.

Terminal Form: GULL WING

Enhanced heat dissipation and mechanical strength.

Maximum Power Dissipation (Abs): 3 W

Can handle high power levels without damage.

Minimum DC Current Gain (hFE): 90

Ensures reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

High reliability and performance.

Maximum Collector Current (IC): 3 A

Can handle high current levels.

Terminal Finish: Tin/Lead (Sn/Pb)

Good solderability and conductivity.

Terminal Position: DUAL

Allows for versatile mounting options.

Moisture Sensitivity Level (MSL): 3

Suitable for standard moisture sensitivity levels.

Case Connection: COLLECTOR

Easy connection to the collector terminal.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder reflow process.

Peak Reflow Temperature °C: 235

Optimal temperature for solder reflow process.

Nominal Transition Frequency (fT): 110 MHz

High frequency performance for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9435T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMJT9435T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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