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MMJT9410T1G

Onsemi

MMJT9410T1G by Onsemi

MMJT9410T1G by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain and low collector current. Suitable for surface mount designs requiring compact packaging and efficient heat dissipation.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

1

-

$0.225

$0.186

$0.166

Distributors (In-Stock)

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Digiode

USA . 1,382 parts In-Stock

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$0.175

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1,382

$0.175

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Vyrian

USA . 8,937 parts In-Stock

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8,937

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Chip Stock

USA . 2,699 parts In-Stock

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2,699

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ComSIT Distribution GmbH

Germany . 1,145 parts In-Stock

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ComSIT USA

USA . 1,145 parts In-Stock

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Corphita

USA . 1,294 parts In-Stock

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$0.166

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$0.166

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Corohmni

South Africa . 96 parts In-Stock

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$0.184

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96

$0.184

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AZTECH Wire

Italy . 1,070 parts In-Stock

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$19.640

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1,070

$19.640

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,175 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Problanco Electronics

Mexico . 6,631 parts In-Stock

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SupplyDigital Components

Austria . 4,850 parts In-Stock

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Kulean Microsystems

USA . 3,050 parts In-Stock

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TANS Electronics

Latvia . 2,032 parts In-Stock

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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Assy Fe

Spain . 80 parts In-Stock

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$0.221

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$0.221

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Overview

Enhance your electronic projects with the MMJT9410T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for various applications in electronics. With a maximum power dissipation of 3 W and a minimum DC current gain of 60, this transistor provides exceptional value and efficiency. Upgrade your designs with the MMJT9410T1G and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuits and offers high performance in amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for various electronic projects.

Surface Mount: YES

Being surface mountable makes the transistor easier to solder onto PCBs, saving space and enabling compact designs.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement on PCBs and allows for efficient use of space in electronic designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and ensures reliable electrical connections in the circuit.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and reliable amplification performance in various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to operate reliably in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle higher voltage levels in the circuit, providing versatility in application.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and durability in electronic circuits.

Maximum Collector Current (IC): 0.01 A

The maximum collector current of 0.01A allows the transistor to handle moderate current levels, making it suitable for various amplification and switching applications.

Terminal Finish: TIN

The terminal finish of tin provides good solderability and corrosion resistance, ensuring reliable electrical connections in the circuit.

Terminal Position: DUAL

The dual terminal position allows for easy installation and connection in the circuit, accommodating different PCB layouts and designs.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, the transistor is resistant to moisture damage, making it suitable for use in various environmental conditions.

Case Connection: COLLECTOR

The case connection at the collector terminal ensures efficient heat dissipation and maintains stable performance of the transistor under load.

Nominal Transition Frequency (fT): 72 MHz

The high nominal transition frequency of 72MHz indicates the transistor's ability to operate at higher frequencies, suitable for RF and high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9410T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMJT9410T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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