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MMJT350T1G

Onsemi

MMJT350T1G by Onsemi

MMJT350T1G by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 300V, max power dissipation of 2.75W, and min DC current gain of 20. With surface mount capability and small outline package style, it operates b/w -55 to 150°C.

Median Price

$0.274

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,745 parts In-Stock

1+ parts

$0.274

100+ parts

$0.261

1k+ parts

$0.248

10k+ parts

-

2,745

$0.274

$0.261

$0.248

-

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$1.210

100+ parts

$0.499

1k+ parts

$0.322

10k+ parts

-

7

$1.210

$0.499

$0.322

-

Verical

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

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$0.244

10k+ parts

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35,000

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-

$0.244

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Chip1Stop

Japan . 2,745 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.248

10k+ parts

-

2,745

-

$0.252

$0.248

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DigiKey

USA . 4 parts In-Stock

1+ parts

-

100+ parts

-

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$0.331

10k+ parts

$0.302

4

-

-

$0.331

$0.302

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 837 parts In-Stock

1+ parts

$0.252

100+ parts

-

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837

$0.252

-

-

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Digiode

USA . 1,562 parts In-Stock

1+ parts

$0.279

100+ parts

-

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1,562

$0.279

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Component Sense

UK . 78,593 parts In-Stock

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78,593

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Bristol Electronics

USA . 1,000 parts In-Stock

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-

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1,000

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ACDS - Activité Composants Distribution Service

France . 450 parts In-Stock

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450

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Dan-Mar Components

USA . 450 parts In-Stock

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450

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Distributors (Availability)

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Corohmni

South Africa . 336 parts In-Stock

1+ parts

$0.252

100+ parts

-

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336

$0.252

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Corphita

USA . 2,382 parts In-Stock

1+ parts

$0.265

100+ parts

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2,382

$0.265

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 16,766 parts In-Stock

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16,766

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Kulean Microsystems

USA . 7,491 parts In-Stock

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7,491

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TANS Electronics

Latvia . 6,343 parts In-Stock

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6,343

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Problanco Electronics

Mexico . 5,770 parts In-Stock

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5,770

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SupplyDigital Components

Austria . 4,355 parts In-Stock

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4,355

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UHIMA Technologies

Türkiye . 607 parts In-Stock

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607

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GreenTree Electronics

Israel . 468 parts In-Stock

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468

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Overview

Discover the MMJT350T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted industry leader, this PNP transistor offers reliability and performance. With a maximum collector-emitter voltage of 300V and a maximum power dissipation of 2.75W, this transistor provides efficient operation in a compact package. Ideal for a variety of electronic applications, the MMJT350T1G delivers value and benefits to customers seeking exceptional performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed for switching applications, offering reliable performance in switching circuits.

Surface Mount: YES

Surface mount capability makes it easy to mount on PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

Rectangular package shape is standard and allows for easy PCB layout.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and facilitates soldering during assembly.

Maximum Power Dissipation (Abs): 2.75 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures consistent performance and amplification in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments.

Maximum Collector-Emitter Voltage: 300 V

With a high collector-emitter voltage, this transistor is suitable for applications requiring high voltage handling.

Transistor Element Material: SILICON

Silicon material enhances the transistor's performance and reliability in various applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable performance in cold environments.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and connection to other components.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures efficient and safe soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable solder joints and connections during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT350T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMJT350T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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