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MMJT9435

Onsemi

MMJT9435 by Onsemi

MMJT9435 by Onsemi is a PNP BJT with 3A IC, 125 hFE, and 3W power dissipation. Ideal for small outline applications, it features GULL WING terminals in a RECTANGULAR package. With an operating temp of 150 °C, it suits various collector connection needs.

Median Price

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Lifecycle Status

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8

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1k+

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Chip Stock

USA . 67,000 parts In-Stock

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Vyrian

USA . 828 parts In-Stock

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Sunrise Surplus Inc.

USA . 500 parts In-Stock

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Digiode

USA . 414 parts In-Stock

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Prism Electronics

USA . 257 parts In-Stock

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PC Components Company LLC

USA . 55 parts In-Stock

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55

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Bristol Electronics

USA . 55 parts In-Stock

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LWI Electronics Inc

India . 28 parts In-Stock

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Problanco Electronics

Mexico . 4,894 parts In-Stock

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SupplyDigital Components

Austria . 3,449 parts In-Stock

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TANS Electronics

Latvia . 3,074 parts In-Stock

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Kepictronics

USA . 2,154 parts In-Stock

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Kulean Microsystems

USA . 2,123 parts In-Stock

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Corphita

USA . 1,780 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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Perfect Parts

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Corohmni

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Overview

Upgrade your electronic designs with the MMJT9435 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is versatile and ideal for a wide range of applications. With a maximum power dissipation of 3W and a minimum DC current gain of 125, the MMJT9435 provides excellent value and benefits to customers looking for efficient and durable components for their projects. Discover the advantages of using this transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good protection and durability for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to implement in different electronic devices.

Surface Mount: YES

Being surface mountable makes the transistor suitable for compact and densely populated PCB designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminal form makes it easy to solder the transistor onto the PCB, ensuring secure connections.

No. of Terminals: 4

Having 4 terminals provides flexibility in connecting the transistor to different parts of the circuit.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3 W, this transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the transistor suitable for compact electronic devices with limited space.

Minimum DC Current Gain (hFE): 125

With a minimum DC current gain of 125, this transistor provides consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures stable performance even in elevated temperature environments.

Transistor Element Material: SILICON

Silicon material used in the transistor element provides high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle high current loads in the circuit.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and conductivity for secure connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options in the circuit design.

Case Connection: COLLECTOR

Having the case connected to the collector provides a stable reference point for the transistor operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMJT9435 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

125

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

MMJT9435 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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