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PN2222ARLRP

Onsemi

PN2222ARLRP by Onsemi

PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

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5

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1k+

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 4,191 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

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Digiode

USA . 1,408 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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AZTECH Wire

Italy . 241 parts In-Stock

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$5.525

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Ampacity Inc.

Singapore . 446 parts In-Stock

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$21.050

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Problanco Electronics

Mexico . 8,175 parts In-Stock

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TANS Electronics

Latvia . 7,229 parts In-Stock

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Kulean Microsystems

USA . 5,739 parts In-Stock

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SupplyDigital Components

Austria . 4,673 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 4,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,259 parts In-Stock

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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Argo Parts USA

USA . 2,368 parts In-Stock

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Corphita

USA . 1,707 parts In-Stock

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Corohmni

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Aranea Global

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Overview

Discover the power of the PN2222ARLRP by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that guarantees reliability and performance. Manufactured by Onsemi, a trusted name in electronic components, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 75, this transistor offers unparalleled value and efficiency. Ideal for a wide range of electronic projects, the PN2222ARLRP is a must-have component for any tech enthusiast or professional. Elevate your designs with this versatile transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and implementation, ideal for straightforward applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable performance in such tasks.

Package Shape: ROUND

The round shape allows for easy mounting and placement in circuit designs.

No. of Terminals: 3

Provides essential connections for proper functionality, suitable for basic circuit requirements.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high power dissipation capability, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and ease of integration into circuit layouts.

Minimum DC Current Gain (hFE): 75

A higher minimum DC current gain ensures stable and consistent amplification in various applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at elevated temperatures, suitable for demanding environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows for versatility in voltage handling capabilities.

Transistor Element Material: SILICON

Silicon-based construction offers reliable performance and durability for long-term usage.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time enables quick response in switching applications, improving overall efficiency.

Maximum Collector Current (IC): 0.6 A

A moderate collector current rating suitable for handling various circuit requirements.

Maximum Turn Off Time (toff): 285 ns

Reasonable turn-off time ensures smooth operation and minimal switching delays.

Terminal Finish: TIN LEAD

Provides reliable electrical connections and solderability, ensuring ease of assembly.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and component orientation in circuit designs.

Peak Reflow Temperature °C: 235

Withstands high peak reflow temperatures during soldering processes, ensuring proper assembly.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient signal processing and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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