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BC859BLT1

Onsemi

BC859BLT1 by Onsemi

BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 40,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 12,000 parts In-Stock

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Vyrian

USA . 10,655 parts In-Stock

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Digiode

USA . 1,972 parts In-Stock

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Native Components

USA . 563 parts In-Stock

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$1.219

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563

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Northwest PG Solutions

USA . 1,157 parts In-Stock

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$1.340

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$1.340

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AZTECH Wire

Italy . 889 parts In-Stock

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$16.200

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889

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Kepictronics

USA . 24,051 parts In-Stock

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TANS Electronics

Latvia . 7,654 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,833 parts In-Stock

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Problanco Electronics

Mexico . 4,681 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,222 parts In-Stock

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Kulean Microsystems

USA . 2,995 parts In-Stock

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SupplyDigital Components

Austria . 2,493 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Corphita

USA . 95 parts In-Stock

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UHIMA Technologies

Türkiye . 86 parts In-Stock

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Overview

Unleash the power of innovation with the BC859BLT1 by Onsemi, a top-tier manufacturer renowned for its superior quality and cutting-edge technology. This Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability in a compact package, making it ideal for a wide range of applications. Whether you're amplifying signals or switching circuits, this PNP transistor delivers outstanding results every time. Trust Onsemi to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for complementary PNP-NPN transistor pairs, allowing for versatile circuit designs.

Configuration: SINGLE

Simplifies circuit design by using a single transistor.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Facilitates easy placement on PCBs and efficient use of available space.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 220

Ensures consistent and stable amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 30 V

Capable of handling moderate voltage levels in circuits.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for low-power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures good electrical conductivity and solderability for reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a moderate duration during assembly.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, ensuring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC859BLT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

220

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC859BLT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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