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MMBT4126LT1

Onsemi

MMBT4126LT1 by Onsemi

MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.

Median Price

$0.550

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$1.070

100+ parts

$0.974

1k+ parts

$0.877

10k+ parts

-

450

$1.070

$0.974

$0.877

-

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

3,000

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,803 parts In-Stock

1+ parts

$0.024

100+ parts

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1,803

$0.024

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Chip Stock

USA . 79,000 parts In-Stock

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79,000

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Vyrian

USA . 11,918 parts In-Stock

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11,918

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SPM Sales

USA . 2,130 parts In-Stock

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2,130

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LWI Electronics Inc

India . 1,600 parts In-Stock

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1,600

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ACDS - Activité Composants Distribution Service

France . 840 parts In-Stock

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840

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Distributors (Availability)

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Corphita

USA . 132 parts In-Stock

1+ parts

$0.022

100+ parts

-

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132

$0.022

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Corohmni

South Africa . 410 parts In-Stock

1+ parts

$0.025

100+ parts

-

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410

$0.025

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.070

100+ parts

$0.974

1k+ parts

$0.877

10k+ parts

-

450

$1.070

$0.974

$0.877

-

AZTECH Wire

Italy . 917 parts In-Stock

1+ parts

$20.770

100+ parts

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917

$20.770

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QUARKTWIN TECHNOLOGY LTD

USA . 10,293 parts In-Stock

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10,293

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SupplyDigital Components

Austria . 7,706 parts In-Stock

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7,706

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Kulean Microsystems

USA . 6,813 parts In-Stock

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6,813

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TANS Electronics

Latvia . 6,632 parts In-Stock

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6,632

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Problanco Electronics

Mexico . 4,334 parts In-Stock

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4,334

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Perfect Parts

USA . 1,882 parts In-Stock

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1,882

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Cyclops Electronics Ltd (Excess)

UK . 840 parts In-Stock

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840

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Glotronic Ltd.

UK . 672 parts In-Stock

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672

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Metaverse IC Inc.

Canada . 660 parts In-Stock

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660

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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11

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Overview

Discover the power of innovation with the MMBT4126LT1 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality in small signal bipolar junction transistors. This PNP transistor offers reliability and efficiency in a compact package, making it ideal for a variety of applications. Whether you're looking to enhance performance in electronics or optimize power management, this transistor provides unmatched value and benefits. Experience the advantage of superior technology with the MMBT4126LT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the components inside, making this product long-lasting and reliable.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in amplification and switching circuits, offering flexibility in various electronic applications.

Configuration: SINGLE

Single configuration simplifies the design and installation process, making it easier to integrate this transistor into different circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient mounting on circuit boards, saving space and improving overall circuit performance.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard circuit board designs, facilitating easy installation and connection in electronic devices.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable connections, ensuring stable operation and reducing the risk of connectivity issues.

No. of Terminals: 3

With 3 terminals, this transistor is versatile and can be used in a variety of circuit configurations, enhancing its overall usability.

Maximum Power Dissipation (Abs): 0.225 W

This high power dissipation rating ensures that the transistor can handle power effectively and operate reliably under various load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards, enabling compact and efficient design layouts in electronic devices.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures efficient amplification and signal processing capabilities, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows this transistor to perform reliably in demanding environments, increasing overall system reliability and longevity.

Maximum Collector-Emitter Voltage: 25 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages, making it suitable for use in various power supply and switching applications.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance, offering high reliability and longevity for this transistor.

Maximum Collector Current (IC): 0.2 A

High collector current rating enables this transistor to handle larger currents, making it suitable for power amplification and switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and robust connections, ensuring long-lasting and reliable performance in various electronic circuits.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible mounting options, improving installation efficiency and compatibility with different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the component, ensuring reliable solder connections and overall circuit performance.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance enables this transistor to withstand elevated temperature processes during assembly, ensuring robust and reliable solder joints.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast signal processing and switching speeds, making this transistor ideal for high-frequency applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT4126LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT4126LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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