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BC488BRL1

Onsemi

BC488BRL1 by Onsemi

BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.

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1k+

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Vyrian

USA . 7,529 parts In-Stock

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Digiode

USA . 645 parts In-Stock

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645

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AZTECH Wire

Italy . 480 parts In-Stock

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$18.140

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480

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Problanco Electronics

Mexico . 7,606 parts In-Stock

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SupplyDigital Components

Austria . 7,268 parts In-Stock

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Kulean Microsystems

USA . 3,199 parts In-Stock

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Corphita

USA . 2,395 parts In-Stock

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TANS Electronics

Latvia . 924 parts In-Stock

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UHIMA Technologies

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Native Components

USA . 298 parts In-Stock

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$3.715

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Corohmni

South Africa . 283 parts In-Stock

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Northwest PG Solutions

USA . 271 parts In-Stock

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Overview

Elevate your electronics projects with the BC488BRL1 by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge solutions in the Small Signal Bipolar Junction Transistors category. This PNP transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 60V and a peak transition frequency of 150MHz. With a minimum DC current gain of 15 and a maximum collector current of 1A, this transistor ensures optimal performance and efficiency. Upgrade your designs with the BC488BRL1 and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for various application environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE

Simplifies the circuit design as only one transistor is needed for operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

Allows for easy mounting and installation in compact spaces.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto a PCB for secure connection.

No. of Terminals: 3

Provides the necessary connections for operation without unnecessary complexity.

Package Style (Meter): CYLINDRICAL

A standard shape that is easy to work with and integrate into existing designs.

Minimum DC Current Gain (hFE): 15

Ensures sufficient gain for the transistor to amplify signals effectively.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltages, making it versatile for a range of applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and consistent performance.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for many switching applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish for the terminals, ensuring good conductivity.

Terminal Position: BOTTOM

Helps in easy placement and orientation during PCB assembly.

Peak Reflow Temperature °C: 235

Can withstand reflow soldering processes without damage, ensuring proper solder connections.

Nominal Transition Frequency (fT): 150 MHz

Offers good frequency response, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC488BRL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC488BRL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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