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BC489ARLRA

Onsemi

BC489ARLRA by Onsemi

BC489ARLRA by Onsemi is a NPN BJT transistor with hFE of 100, VCE of 80V, and fT of 200MHz. Ideal for switching applications, it has a max collector current of 0.5A and operates up to 150 °C. Its through-hole package style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,032 parts In-Stock

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Vyrian

USA . 279 parts In-Stock

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279

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Native Components

USA . 313 parts In-Stock

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$1.638

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313

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Northwest PG Solutions

USA . 451 parts In-Stock

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$1.801

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Kulean Microsystems

USA . 6,891 parts In-Stock

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TANS Electronics

Latvia . 6,783 parts In-Stock

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SupplyDigital Components

Austria . 6,478 parts In-Stock

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Corphita

USA . 2,331 parts In-Stock

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UHIMA Technologies

Türkiye . 566 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Problanco Electronics

Mexico . 288 parts In-Stock

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Overview

The BC489ARLRA by Onsemi is a top-notch Small Signal Bipolar Junction Transistor (BJT) that guarantees high-quality performance and reliability. With a maximum operating temperature of 150 °C, this NPN transistor is perfect for various switching applications. Its durable plastic/epoxy package body material ensures longevity, while the minimum DC current gain of 100 and maximum collector-emitter voltage of 80 V provide efficiency and stability. Trust Onsemi's expertise in semiconductor manufacturing to deliver cutting-edge technology that meets your needs. Experience the superior value and benefits of the BC489ARLRA today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various devices and circuit boards.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and configurations.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistency and reliability in amplification and switching operations.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 80 V

Safely handles up to 80 volts, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 amps of collector current, suitable for many low to medium power applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, crucial in applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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