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BC489AZL1

Onsemi

BC489AZL1 by Onsemi

BC489AZL1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 80V and max current of 0.5A. With a min DC current gain of 100, it's ideal for switching applications at up to 150 °C operating temperature in through-hole packages.

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,284 parts In-Stock

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Vyrian

USA . 1,026 parts In-Stock

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Native Components

USA . 230 parts In-Stock

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$5.006

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Component Stockers USA

USA . 429 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,820 parts In-Stock

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Kulean Microsystems

USA . 7,373 parts In-Stock

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SupplyDigital Components

Austria . 3,823 parts In-Stock

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TANS Electronics

Latvia . 3,513 parts In-Stock

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Northwest PG Solutions

USA . 1,484 parts In-Stock

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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Corohmni

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Corphita

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Overview

Discover the power of the BC489AZL1 by Onsemi, a top-notch Small Signal Bipolar Junction Transistor for all your switching needs. With high-quality materials and reliable performance, this NPN transistor offers exceptional value to customers. Whether you're looking to optimize your circuit design or improve efficiency, this product is the perfect solution. Trust in Onsemi's reputation for excellence and unlock the full potential of your electronics with the BC489AZL1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are easy to work with in circuits.

Configuration: SINGLE

Simplifies circuit design and reduces complexity for the user.

Transistor Application: SWITCHING

Specifically designed for switching applications, which ensures efficient and reliable performance in such scenarios.

Package Shape: ROUND

Round shape allows for easy mounting and handling in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a stable and secure connection, making the transistor suitable for soldering onto circuit boards.

Maximum Power Dissipation: 0.625 W

With a relatively high power dissipation capability, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and predictable transistor behavior in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature conditions, making it versatile for various applications.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can be used in circuits requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good thermal stability, making them ideal for general-purpose applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling currents up to 0.5A, allowing for use in various low to moderate current applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability, ensuring easy and reliable connections during assembly.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering on PCBs.

Peak Reflow Temperature: 235 C

Can withstand high reflow temperatures during soldering processes, ensuring proper and secure solder joints.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489AZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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