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BC489ARL

Onsemi

BC489ARL by Onsemi

BC489ARL by Onsemi is a NPN BJT transistor with hFE of 100, VCE of 80V, and fT of 200MHz. Ideal for switching applications due to its single configuration and max collector current of 0.5A. The through-hole package style makes it suitable for various electronic designs requiring high-speed performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,358 parts In-Stock

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Vyrian

USA . 1,393 parts In-Stock

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Native Components

USA . 723 parts In-Stock

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$0.814

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Northwest PG Solutions

USA . 1,283 parts In-Stock

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TANS Electronics

Latvia . 5,834 parts In-Stock

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Problanco Electronics

Mexico . 3,639 parts In-Stock

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Kulean Microsystems

USA . 3,602 parts In-Stock

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SupplyDigital Components

Austria . 2,870 parts In-Stock

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Corphita

USA . 526 parts In-Stock

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Corohmni

South Africa . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 41 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BC489ARL by Onsemi. As a leader in small signal bipolar junction transistors, Onsemi delivers quality and performance that you can trust. With a minimum DC current gain of 100 and a maximum operating temperature of 150 °C, this NPN transistor offers superior functionality. Whether you're designing circuits for automation, telecommunications, or automotive industries, the BC489ARL provides the value and benefits you need for seamless operation. Upgrade to Onsemi today and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various electronic designs.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process, making it convenient for users.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient operation for electronic devices.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering onto PCBs, enhancing the usability of the transistor.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections to the circuit board, ensuring reliability and stability in operation.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into various circuit configurations, offering flexibility in design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation and compact placement within electronic devices.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the transistor can withstand elevated temperatures, making it suitable for diverse environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable performance and longevity of the transistor.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A enables the transistor to handle moderate current loads in electronic circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and corrosion resistance, ensuring secure connections for the transistor.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and allows for easy PCB mounting of the transistor.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency of 200 MHz, this transistor is suitable for high-speed switching applications in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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