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BC487

Onsemi

BC487 by Onsemi

BC487 by Onsemi is a NPN BJT transistor with a max power dissipation of 0.625W and max collector-emitter voltage of 60V. Ideal for switching applications, it has a min DC current gain of 60 and operates at temperatures up to 150 °C.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 5,627 parts In-Stock

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-

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$0.079

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$0.066

10k+ parts

$0.059

5,627

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$0.079

$0.066

$0.059

DigiKey

USA . 5,627 parts In-Stock

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$0.100

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$0.100

Verical

USA . 5,627 parts In-Stock

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$0.073

5,627

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$0.073

Distributors (In-Stock)

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Digiode

USA . 834 parts In-Stock

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$0.062

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834

$0.062

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Vyrian

USA . 2,160 parts In-Stock

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$0.065

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Fibra_Brandt Electronic GMBH

Germany . 500 parts In-Stock

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500

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LittleDiode

UK . 120 parts In-Stock

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ECAB

Sweden . 6 parts In-Stock

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Corphita

USA . 2,317 parts In-Stock

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$0.058

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$0.058

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Corohmni

South Africa . 163 parts In-Stock

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$0.065

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Native Components

USA . 793 parts In-Stock

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$0.292

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$0.280

793

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$0.280

Northwest PG Solutions

USA . 841 parts In-Stock

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$0.321

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$0.283

841

$0.321

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$0.283

QUARKTWIN TECHNOLOGY LTD

USA . 15,637 parts In-Stock

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SupplyDigital Components

Austria . 8,096 parts In-Stock

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Continental Prestige Electronics

USA . 7,765 parts In-Stock

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$0.059

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$0.059

Kulean Microsystems

USA . 6,531 parts In-Stock

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TANS Electronics

Latvia . 3,511 parts In-Stock

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Problanco Electronics

Mexico . 3,412 parts In-Stock

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Assy Fe

Spain . 3,380 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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Overview

Enhance your electronic projects with the BC487 Small Signal Bipolar Junction Transistor by Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers high-quality performance in switching applications. Its durable plastic/epoxy package ensures reliability, while its single configuration simplifies installation. With a maximum power dissipation of 0.625 W and a maximum collector-emitter voltage of 60 V, the BC487 delivers outstanding value and efficiency. Upgrade your designs today with the BC487 for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Common type of BJT which is widely used and easily compatible with other components.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient performance.

Package Shape: ROUND

Allows for easy mounting and installation in circular spaces or PCB layouts.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto a PCB, providing a secure connection.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, suitable for a variety of applications.

Terminal Position: BOTTOM

Facilitates convenient PCB mounting and placement.

Maximum Collector-Emitter Voltage: 60 V

Allows for operation at relatively high voltages, increasing versatility.

Nominal Transition Frequency (fT): 200 MHz

Offers high frequency operation, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC487 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC487 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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