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BC489ARL1

Onsemi

BC489ARL1 by Onsemi

BC489ARL1 by Onsemi is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. It is used for switching applications in cylindrical package style with through-hole terminals. Operating at up to 150 °C, it features silicon element material and has a transition frequency of 200MHz.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

USA . 1,977 parts In-Stock

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SupplyDigital Components

Austria . 7,807 parts In-Stock

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TANS Electronics

Latvia . 7,023 parts In-Stock

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Kulean Microsystems

USA . 2,832 parts In-Stock

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Problanco Electronics

Mexico . 1,714 parts In-Stock

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 963 parts In-Stock

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Native Components

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Corohmni

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Overview

Discover the BC489ARL1 by Onsemi, a high-quality NPN transistor that brings unmatched performance to your switching applications. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 80V, this single configuration transistor is designed for reliability and efficiency. Whether you're working on industrial controls, automation systems, or consumer electronics, the BC489ARL1 offers the perfect solution with its versatile package style and advanced silicon element material. Trust Onsemi's expertise in small signal BJT technology to elevate your designs and unlock new possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

Simplifies the circuit design and reduces complexity, making it easier to use in different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easily mounted on a circuit board, providing secure connections for reliable performance.

No. of Terminals: 3

Simple and standard configuration, easy to integrate into various circuit designs.

Package Style (Meter): CYLINDRICAL

Provides a sturdy and reliable package style for the transistor, ensuring long-term performance.

Minimum DC Current Gain (hFE): 100

Higher gain allows for better amplification and signal control, making it versatile for different applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage handling capabilities, ensuring reliable operation.

Transistor Element Material: SILICON

Silicon transistors offer better performance and reliability compared to other materials, ensuring long-term stability.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various switching applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability, ensuring secure connections for reliable performance.

Terminal Position: BOTTOM

Easy to solder and mount on a PCB, ensuring secure connections for stable operation.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for faster response times and better high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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